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| 2SK740 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg Ratings 150 20 10 40 10 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK740 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 120 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.12 10 250 4.0 0.15 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 4.0 -- -- -- -- -- -- -- -- 7.0 1200 550 85 20 50 70 40 1.2 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/s ID = 5 A, VGS = 10 V, RL = 6 -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 220 -- ns -------------------------------------------------------------------------------------- 2SK740 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area 10 Drain Current ID (A) 40 10 10 0 s s ) ) ot 5C 2 Sh s 1 = m s( TC 1 m ( 10 ion t = ra PW pe O C D 20 1.0 Operation in this area is limited by RDS (on) Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 100 10 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 15V 10 V 8V 16 Drain Current ID (A) Pulse Test 6V Drain Current ID (A) 20 Typical Transfer Characteristics -25C 16 V = 10 V DS Pulse Test 12 75C TC = 25C 12 5.5 V 8 5V 4 VGS = 4.5 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 8 4 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK740 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation Voltage VDS (on) (V) PulseTest 4 Static Drain to Source on State Resistance RDS (on) () 0.5 Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 VGS = 10 V 3 15 V 0.05 Pulse Test 2 ID = 10 A 1 5A 2A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 0.02 0.01 0.005 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () VGS = 10 V Pulse Test 0.4 Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current 20 10 5 VGS = 10 V Pulse Test -25C Ta = 25C 75C 0.3 10 A 0.2 5A 0.1 2A 2 1.0 0.5 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 2 5 Drain Current ID (A) 10 20 2SK740 2SK740 2SK740 |
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