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2SK2315
Silicon N Channel MOS FET
Application
UPAK
High speed power switching
Features
3 Low on-resistance High speed switching Low drive current 2.5 V gate drive device - - - can be driven from 3 V source. * Suitable for DC - DC converter, motor drive, power switch, solenoid drive * * * *
2
1
4
2, 4 1
1. Gate 2. Drain 3. Source 4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** *** Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 2 4 2 1 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
PW 10 s, duty cycle 1 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "TY"
2SK2315
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.3 A VGS = 3 V * ID = 1 A VGS = 4 V * ID = 1 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A, RL = 30 VGS = 10 V
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
20 -- -- V
--------------------------------------------------------------------------------------
-- -- 0.5 -- -- -- -- 0.4 5 5 1.5 0.6 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------
-- 0.35 0.45
--------------------------------------------------------------------------------------
Forward transfer admittance |yfs| Ciss Coss Crss ton toff 1.5 1.8 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time * Pulse Test -- -- -- -- -- 173 85 23 21 85 -- -- -- -- -- pF pF pF ns ns
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------
2SK2315
Power vs. Temperature Derating 1.6 Channel Dissipation Pch** (W) (** on the almina ceramic board) I D (A)
5 2
Maximum Safe Operation Area
100 s
PW
1
1.2
1 0.5
=
m
s
10
m
s
C D
Drain Current
0.8
0.2 0.1 0.05 0.02 0.01
Operation in this area is limited by R DS(on)
O n t io ra pe
0.4
Ta = 25 C 1 shot pulse
0.5 1 2 5 10 20 50 100 200
0
50
100
150 Ta (C)
200
0.005 0.2
Ambient Temperature
Drain to Source Voltage
V DS (V)
Typical Output Characteristics 5 10 V 5V 4V 3.5 V (A) Ta = 25 C Pulse Test 3V
Typical Transfer Characteristics 5
I D (A)
4
4 Tc = 75 C 25 C -25 C
ID 2.5 V Drain Current 2V V GS = 1.5 V
3
3
Drain Current
2
2
1
1
V DS = 10 V Pulse Test 1 2 3 Gate to Source Voltage 4 5 V GS (V)
0
2 4 6 Drain to Source Voltage
8 V DS (V)
10
0
2SK2315
Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Ta = 25 C Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 1.0
Static Drain to Source State Resistance vs. Drain Current 5 2 1 0.5 VGS = 3 V 10 V 0.2 0.1 Ta = 25 C Pulse Test
0.8
0.6
I D= 2 A
0.4 1A 0.2 0.5 A
0
4 8 12 Gate to Source Voltage
16 V GS (V)
20
0.05 0.1
0.2
0.5 1 Drain Current
2 5 I D (A)
10
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 1.0
Forward Transfer Admittance vs. Drain Current 10 5 2 1 0.5 V DS = 10 V Pulse Test Tc = -25 C 25 C 75 C
0.8 I D= 2 A 0.6 VGS = 3 V 1A 0.4 0.5 A
0.2 0 -40
VGS = 10 V
1A 0.5 A I D= 2 A
0.2 0.1 0.1
0 40 80 120 160 Case Temperature Tc (C)
0.2
0.5
1
2
5
10
Drain Current I D (A)
2SK2315
Typical Capacitance vs. Drain to Source Voltage 1000
Dynamic Input Characteristics V DS (V) VGS 16 V GS (V) Gate to Source Voltage 100 V DD = 50 V 25 V 10 V 20
Capacitance C (pF)
Ciss 100 Coss
80
Drain to Source Voltage
60 VDS 40 I D= 2 A
12
Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 50 Drain to Source Voltage V DS (V)
8
20
V DD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nc)
4 0 10
0
200 100 Switching Time t (ns)
Switching Characteristics 5 t d(off) Reverse Drain Current I DR (A)
Reverse Drain Current vs. Souece to Drain Voltage Pulse Test 4
50 tf tr
3 10 V 2 5V V GS = 0
20 10 5
t d(on)
2 0.05 0.1
V GS = 10 V, PW = 2 s V DD = 30 V, duty < 1 % 0.2 0.5 Drain Current 1 2 I D (A) 5
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)

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