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| 2SK1667 Silicon N Channel MOS FET Application High speed power switching TO-220AB TO-220AB Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC convertor 2 1 1 2 3 1.1. Gate Gate 2.2. Drain (Flange) Drain (Flange) 3.3. Source Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 7 28 7 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1667 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID =4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.4 10 250 3.0 0.55 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3.0 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 690 265 45 13 55 65 37 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 180 -- ns -------------------------------------------------------------------------------------- 2SK1667 Power vs. Temperature Derating 80 Maximum Safe Operation Area 100 Operation in this area is limited by R DS (on) Pch (W) 30 60 10 Drain Current I D (A) 10 s 0 10 D PW s Channel Dissipation 1 C = m s 40 3 O pe ra 10 m 1 tio s n 20 (T (1 c sh = ot 25 ) C 0.3 0 50 100 Case Temperature 150 Tc (C) 200 Ta = 25C ) 0.1 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 10 V 8 Drain Current I D (A) 6V 5V 6 5.5 V Pulse Test 8 Drain Current I D (A) 10 Typical Transfer Characteristics V DS = 10 V Pulse Test 6 4 4.5 V 4 Tc = 75C 2 V GS = 4 V 2 25C - 25C 0 1 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage V GS (V) 2SK1667 Drain-Source Saturation Voltage vs. Gate-Source Voltage 10 Drain to Source Saturation Voltage V DS (on) (V) Pulse Test 8 5 Static Drain-Source ON State Resistance vs. Drain Current Static Drain-Source On State Resistance R DS (on) ( ) Pulse Test 2 1 V GS = 10 V 6 I D = 10 A 4 0.5 15 V 0.2 0.1 2 5A 2A 0 4 8 12 16 20 0.05 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source ON State Resistance vs. Temperature 2.0 50 Forward Transfer Admittance vs. Drain Current Static Drain-Source On State Resistance R DS (on) ( ) 1.6 Pulse Test V GS = 10 V Forward Transfer Admittance |y fs| (S) 20 10 Pulse Test V DS = 10 V - 25C 25C 1.2 I D = 10 A 5A 5 Tc = 75C 0.8 2 1 0.4 2A 0 - 40 0 40 80 120 160 0.5 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (C) Drain Current I D (A) 2SK1667 Body-Drain Diode Reverse Recovery Time 500 1000 Typical Capacitance vs. Drain-Source Voltage Ciss Reverse Recovery Time trr (ns) 200 Capacitance C (pF) Coss 100 100 50 Crss 10 V GS = 0 f = 1 MHz 1 0 20 10 5 0.2 di / dt = 100 A / s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 ID = 7 A Drain to Source Voltage V DS (V) Switching Time t (ns) VGS 300 200 V 200 VDS 100 V V DD = 50 V V DD = 200 V 100 V 50 V 0 8 16 24 32 0 40 5 0.1 8 12 Gate to Source Voltage VGS (V) 400 16 200 100 50 20 500 Switching Characteristics . V GS = 10 V, V DD = 30 V . PW = 2 s, duty 1 % td (off) tf 20 10 tr td (on) 100 4 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 2SK1667 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 4 V GS = 10 V 2 V GS = 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 0.01 1 shot Pulse 100 1m 10 m Pulse Width PW (S) 100 m ch - c(t) = s(t) . ch - c ch - c = 2.5C / W, Tc = 25C PW D= T P DM T PW Tc = 25C 1.0 1 10 2SK1667 Switching Time Test Circuit Waveforms Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50 Vin V out 10 % 10 % 90 % 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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