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| 2SK1300 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 1 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 10 40 10 40 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1300 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.5 -- -- -- -- -- -- -- -- -- -- -- 0.20 0.25 7.0 525 205 60 5 50 170 75 1.2 10 250 2.0 0.25 0.35 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/s ID = 5 A, VGS = 10 V, RL = 6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 5 A, VGS = 4 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 220 -- ns -------------------------------------------------------------------------------------- 2SK1300 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 Ta = 25C 30 Drain Current ID (A) 10 s 0 10 40 10 PW 1 s = m D C 3 1 0.3 0.1 1 10 s pe O m s tio ra (1 20 Sh Operation in this area is limited by RDS (on) 10 3 30 100 300 1000 Drain to Source Voltage VDS (V) n (T C ot ) = 25 C ) 0 50 100 Case Temperature TC (C) 150 Typical Output Characteristics 20 10 V 16 Drain Current ID (A) 6V Pulse Test 4V Drain Current ID (A) 10 Typical Transfer Characteristics VDS = 10 V Pulse Test 8 12 3.5 V 8 3V 4 VGS = 2.5 V 6 4 2 TC = 75C 25C -25C 5 0 4 8 12 16 20 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 2SK1300 Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 Drain to Source Saturation Voltage VDS (on) (V) 2.0 Static Drain to Source on State Resistance RDS (on) () Pulse Test 10 A 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1 0.5 VGS = 4 V 0.2 0.1 0.05 0.5 10 V 1.5 5A 1.0 0.5 ID = 2 A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) 1 2 10 5 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test 0.4 ID = 10 A 5A 2A 10 A 5A 0.3 VGS = 4 V 2A Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V 20 Pulse Test 10 5 25C 75C 2 1 0.5 0.1 TC = -25C 0.2 10 V 0.1 0 -40 0 40 120 80 Case Temperature TC (C) 160 0.2 5 0.5 2 1 Drain Current ID (A) 10 2SK1300 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 1000 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 200 100 50 di/dt = 50 A/s VGS = 0, Ta = 25C Pulse Test 100 Ciss 20 10 5 0.1 10 Coss VGS = 0 f = 1 MHz 1 0.2 1 0.5 2 5 Reverse Drain Current IDR (A) 10 0 Crss 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 200 Drain to Source Voltage VDS (V) 160 20 Gate to Source Voltage VGS (V) 16 VGS 12 500 Switching Characteristics td (off) Switching Time t (ns) 200 100 50 20 10 5 0.2 tf 120 VDD = 25 V 50 V 80 V 80 40 VDS ID = 10 A 8 4 tr VGS = 10 V, PW = 2 s . duty < 1 % VDD = 30 V . td (on) 0.5 2 1 5 10 Drain Current ID (A) 20 VDD = 80 V 50 V 25 V 8 0 16 24 32 Gate Charge Qg (nc) 0 40 2SK1300 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current IDR (A) 16 12 8 5V 4 VGS = 10 V 0, -5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 e 0.03 0.01 t Puls ho 1S TC = 25C ch-c (t) = s (t) * ch-c ch-c = 3.13C/W, TC = 25C PDM T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 D =PW T 0.01 10 10 2SK1300 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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