 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline 2SJ483 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -30 20 -5 -20 -5 0.9 150 -55 to +150 Unit V V A A A W C C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % Pch Tch Tstg Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min -30 20 -- -- -1.0 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.08 0.12 5 630 390 135 15 70 65 60 -1.0 60 Max -- -- -10 10 -2.0 0.11 0.17 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I D = -5A, VGS = 0 I F = -5A, VGS = 0 diF/ dt = 20A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS = 0 I D = -1mA, VDS = -10V I D = -2.5A VGS = -10V*1 I D = -2.5A VGS = -4V*1 I D = -2.5A, VDS = -10V*1 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -2.5A RL = 4 2 2SJ483 Main Characteristics 3 2SJ483 4 2SJ483 5 2SJ483 6 2SJ483 Package Dimensions Unit: mm 7 2SJ483 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 8 |
Price & Availability of 2SJ483
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |