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Transistors
2SD2457
Silicon NPN epitaxial planar type
For low-frequency power amplification
Unit: mm
4.50.1
s Features
q q q
1.60.2
1.50.1
1.0+0.1 -0.2
High collector to emitter voltage VCEO Large collector power dissipation PC Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.0+0.25 -0.20
2.50.1 3
1 0.40.08 1.50.1 3
3 2 0.50.08
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Ta=25C
Ratings 50 40 5 3 1.5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C
3.00.15
45
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking symbol: 1Y
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE Rank classification
(Ta=25C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 VCB = 5V, IE = -0.5A*2, f = 200MHz 150 45
*2
min
typ
max 1 100 10
Unit A A A V V
50 40 80 120 220 1 1.5
V V MHz pF
VCB = 20V, IE = 0, f = 1MHz
Pulse measurement
Rank hFE
Q 80 ~ 160
R 120 ~ 220
Publication date: August 2002
0.4 max.
2.60.1
SJC00263AED
1
2SD2457
PC -- Ta
1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IB=40mA 35mA 30mA 2.5 2.0 1.5 10mA 1.0 0.5 5mA 25mA 20mA 15mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (W)
1.0
Collector current IC (A)
3.0
0.8
Ta=75C 25C -25C
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 300 VCE=5V 240
fT -- I E
VCB=5V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
250
Transition frequency fT (MHz)
1 3 10
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
200
200 Ta=75C 150 25C -25C 100
160
120
80
50
40
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
0 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob -- VCB
120
Collector output capacitance Cob (pF)
100
IE=0 f=1MHz Ta=25C
80
60
40
20
0 1 3 10 30 100
Collector to base voltage VCB (V)
2
SJC00263AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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