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Transistor
2SD2067 (Tentative)
Silicon NPN epitaxial planer type
0.7 6.90.1 4.0
Unit: mm
2.50.1 (0.8)
(1.0) (0.2) 4.50.1
0.65 max.
q q q q q
Darlington connection. High foward current transfer ratio hFE. Large peak collector current ICP. High collector to emitter voltage VCEO. Allowing supply with the radial taping.
14.50.5
s Features
(1.0)
0.45+0.10 -0.05 2.50.5 2.50.5
1.050.05
0.45+0.10 -0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
1
2
3
(Ta=25C)
Ratings 120 100 5 3 2 1 150 -55 ~ +150 Unit V V V A
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT-2-A1 Package
1.20.1
A W C C
0.45+0.1 - 0.05
0.65 max.
(HW type)
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
Internal Connection
C B
200
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage
*1h FE
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE
*1
Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = IC = 1A, IB = 1A*2 IC = 1A, IB = 1mA*2 1mA*2
min
typ
max 0.1 1
(0.5)
For low-frequency output amplification
Unit A A V V V
120 100 5 4000 40000 1.5 2
*2
VCE(sat) VBE(sat)
V V
Rank classification
Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
Pulse measurement
Rank hFE
661
Transistor
PC -- Ta
1.2 3.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 2.5 IB=180A 150A 2.0 120A 90A 1.5 60A
2SD2067
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=1000
Collector power dissipation PC (W)
1.0
Collector current IC (A)
3 25C 1 Ta=100C -25C 0.3
0.8
0.6
0.4
1.0
0.1
0.2
0.5
30A
0.03
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0.01 0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
105
hFE -- IC
Ta=100C
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V 60 IE=0 f=1MHz Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
100
IC/IB=1000
Forward current transfer ratio hFE
50
25C 104 -25C
30
40
10
103
30
3 Ta=-25C 1 100C 0.3
25C
20
102
10
0.1 0.01
0.03
0.1
0.3
1
3
10 0.01 0.03
0 0.1 0.3 1 3 10 1 3 10 30 100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
10 3 ICP IC 1 t=1s 0.3 0.1 0.03 0.01 0.003 0.001 0.1 Single pulse Ta=25C t=10ms
Collector current IC (A)
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
662
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2001 MAR

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