 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 6.90.1 2.50.1 (1.0) (1.5) (1.5) (0.4) s Features q q 1.00.1 (0.85) 2.40.2 0.450.05 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 3 (2.5) 2 (2.5) 1 1.250.05 s Absolute Maximum Ratings (Ta=25C) 0.550.1 M-A1 Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25C) Symbol VCBO VCEO VEBO hFE fT Cre Zrb * Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA min 30 20 5 70 150 typ max Unit V V V 250 230 1.3 1.6 60 MHz pF *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank 368 4.10.2 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.50.1 (1.0) 2.00.2 4.50.1 R 0.9 R 0.7 Transistor PC -- Ta 500 12 Ta=25C 10 IB=100A 100 2SC2647 IC -- VCE 120 VCE=10V Ta=25C IB -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 8 60A 6 40A Base current IB (A) 18 80A 80 300 60 200 4 40 100 2 20A 20 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 0.6 1.2 1.8 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 100 30 10 3 1 0.3 VCE(sat) -- IC IC/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Collector current IC (mA) 40 25C 30 Ta=75C 20 -25C Ta=75C 25C 0.1 0.03 0.01 0.1 -25C 10 50 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V 500 2.0 400 VCB=10V 6V 200 1.6 300 1.2 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 369 Transistor Cob -- VCB 1.6 12 yie=gie+jbie VCE=10V 2SC2647 bie -- gie 0 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V f=0.45MHz 10.7 25 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25C Input susceptance bie (mS) 10 100 - 0.5 8 58 -1.0 - 0.4mA -1mA -1.5 -2mA -4mA 58 6 25 10.7 IE=- 0.4mA -1mA -2mA -4mA -7mA f=0.45MHz 4 -2.0 2 -2.5 100 IE=-7mA 0 30 100 0 4 8 12 16 20 -3.0 - 0.5 -0.4 - 0.3 - 0.2 - 0.1 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe -- gfe 0 boe -- goe 0.45 Forward transfer susceptance bfe (mS) - 0.1mA - 0.4mA 25 100 100 58 0.45 10.7 -1mA 1.2 100 10.7 -20 Output susceptance boe (mS) -2mA 25 58 1.0 -4mA 100 -40 100 58 25 f=10.7MHz 0.8 58 0.6 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 -7mA -4mA -2mA -1mA - 0.4mA IE=- 0.1mA -60 58 IE=-7mA -80 -100 yfe=gfe+jbfe VCE=10V yoe=goe+jboe VCE=10V 0.6 0.8 1.0 -120 0 20 40 60 80 100 0 Forward transfer conductance gfe (mS) Output conductance goe (mS) 370 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SC2647
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |