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| 2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline 2SC1472 (K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Symbol Min 30 -- -- 1 1 Typ -- -- -- -- -- -- -- -- -- -- 60 Max -- 100 100 100000 -- -- 1.5 2.0 -- 10 -- Unit V nA nA Test conditions I C = 1 mA, RBE = VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 mA, VCE = 5 V I C = 100 mA, VCE = 5 V (Pulse Test) I C = 400 mA, VCE = 5 V (Pulse Test) Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CBO I EBO hFE1* hFE2* 2000 3000 3000 -- -- 50 -- -- hFE3* 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob t on V V MHz pF ns I C = 100 mA, IB = 0.1 mA I C = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 mA I B2 = -IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 A t off t stg B -- -- 800 350 -- -- ns ns 1. The 2SC1472(K) is grouped by h FE as follows. 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min 2 2SC1472 (K) 3 2SC1472 (K) 4 2SC1472 (K) 5 2SC1472 (K) 6 2SC1472 (K) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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