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| Transistor 2SB1589 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 4.50.1 1.60.2 s q q q 1.50.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0+0.25 -0.20 2.50.1 3 1.0+0.1 -0.2 0.40.04 1 0.40.08 1.50.1 3 3 2 0.50.08 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -10 -10 -7 -2 -1.5 1 150 -55 ~ +150 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3.00.15 45 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg MiniP3-F1 Package Marking symbol : 1U Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Forward voltage *1 Applicable (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob VF *1 Conditions VCB = -7V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -1V, IC = -400mA*2 IC = -1A, IB = -25mA*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz IF = -500mA min typ max -1 Unit A V V V -10 -10 -7 200 - 0.24 190 65 -1.3 *2 700 - 0.35 V MHz pF V to the built-in diode. Pulse measurement Publication date: August 2002 SJC00093BED 0.4 max. 2.60.1 1 2SB1589 PC -- Ta 1.2 -3.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C -2.5 -2.0 IC -- VCE -2.4 IC -- VBE VCE=-1V Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 -2.0 Collector current IC (A) -1.6 Ta=75C -1.2 25C -25C 0.6 -1.5 IB=-3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA 0.4 -1.0 - 0.8 0.2 - 0.5 - 0.4 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 Ta=75C 25C -25C IC/IB=40 600 hFE -- IC 600 VCE=-1V fT -- I E VCB=-6V f=200MHz Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C 300 Transition frequency fT (MHz) -1 -3 -10 500 400 - 0.3 - 0.1 -25C 300 - 0.03 - 0.01 200 200 100 100 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 -0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 SJC00093BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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