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| BTA06 TW/SW BTB06 TW/SW LOGIC LEVEL TRIACS .LOWI .LOWI .HI .BTAFami FEATURES GT = 5mA max H = 15mA max GH EFFICIENCY SWITCHING ly : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 TW/SW use high performance products glass passivated chips. The low IGT / IH level coupled with the high efficiency circuit make this family will adapted for low power trigger circuits (microcontrollers, microprocessors, integrated circuits ...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/s Parameter BTA BTB ITSM A1 A2 G TO220AB (Plastic) Value Tc = 80 C Tc = 90 C tp = 8.3 ms tp = 10 ms 63 60 18 20 100 - 40 to + 150 - 40 to + 110 260 6 Unit A A I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 TW/SW C C C Symbol BTA / BTB06600 TW/SW 600 700 TW/SW 700 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 110 C 400 V March 1995 1/5 BTA06 TW/SW / BTB06 TW/SW THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 4.4 3.3 3.3 2.5 C/W Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s) VGM = 16V (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix TW IGT VGT VGD tgt VD=12V VD=12V (DC) RL=33 (DC) RL=33 Tj=25C Tj=25C Tj=110C Tj=25C I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP 5 1.5 0.2 2 SW 10 mA V V s 15 25 25 1.75 0.01 1 20 2.7 1.3 50 3.5 2.7 V/s A/ms mA V mA mA Unit VD=VDRM RL=3.3k VD=VDRM IG = 40mA dIG/dt = 0.5A/s IG=1.2 IGT IL Tj=25C I-III II TYP 8 15 IH * VTM * IDRM IRRM dV/dt * (dI/dt)c * IT= 100mA gate open ITM = 8.5A tp= 380s VDRM VRRM Rated Rated Tj=25C Tj=25C Tj=25C Tj=110C Tj=110C Tj=110C MAX MAX MAX MAX MIN MIN MIN 15 Linear slope up to VD=67%VDRM gate open dV/dt= 0.1V/s dV/dt= 20V/s * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 BTA06 TW/SW / BTB06 TW/SW ORDERING INFORMATION Package IT(RMS) A BTA (Insulated) 6 VDRM / VRRM V 400 600 700 BTB (Uninsulated) 400 600 700 Sensitivity Specification TW X X X X X X SW X X X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.4 : RMS on-state current versus case temperature. 3/5 BTA06 TW/SW / BTB06 TW/SW Fig.5 : Relative variation of thermal transient impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. Fig.9 : On-state characteristics (maximum values). Fig.10 : Relative variation of (dI/dt)c versus junction temperature. 4/5 BTA06 TW/SW / BTB06 TW/SW PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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