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Bulletin I25192 rev. C 04/00
ST780C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK)
1350A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical
case style TO-200AC (B-PUK)
Units
A C A C A A KA2s KA2s V s C
ST780C..L
1350 55 2700 25 24400 25600 2986 2726 400 to 600 150 - 40 to 125
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ST780C..L Series
Bulletin I25192 rev. C 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 06
V DRM/V RRM, max. repetitive peak and off-state voltage V
400 600
VRSM , maximum nonrepetitive peak voltage V
500 700
I DRM/I RRM max.
@ TJ = TJ max
mA
80
ST780C..L
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current
ST780C..L
1350 (500) 55 (85) 2700 24400 25600 20550 21500
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2 t
Maximum I2t for fusing
2986 2726 2112 1928
I2 t
Maximum I2t for fusing
29860 0.80
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state
V 0.90 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 0.13 1.31 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 3600A, TJ = TJ max, t = 10ms sine pulse
pk p
0.14 slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td t Typical delay time Typical turn-off time
ST780C..L
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 750A, TJ = T J max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s
p
q
150
2
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ST780C..L Series
Bulletin I25192 rev. C 04/00
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST780C..L
500 80
Units Conditions
V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
ST780C..L
10.0 2.0 3.0 20
Units Conditions
T J = TJ max, t 5ms W A
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST780C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.006 14700 (1500)
Units
C
Conditions
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
K/W N (Kg) g
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
See Outline Table
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ST780C..L Series
Bulletin I25192 rev. C 04/00
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Conduction angle
Single Side Double Side 180 120 90 60 30 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.020 0.036
Rectangular conduction Units
Single Side Double Side 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.021 0.036 K/W TJ = TJ max.
Conditions
Ordering Information Table
Device Code
ST
1
78
2
0
3
C
4
06
5
L
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST780C..L Series
Bulletin I25192 rev. C 04/00
Outline Table
0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 2 7 (1 . 0 6 ) M A X .
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 5 8.5 (2 .3 ) D IA . M AX . 4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
Maximum Allowable Heatsink Temp erature (C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (C )
130 120 110 100 90
ST780C..L Series (Single Side Cooled) R th J-hs (DC) = 0.073 K/W
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 2 00 400 30
S T 7 8 0 C ..L S e rie s ( Sin g le S id e C o o le d ) R t hJ-hs (D C ) = 0 .0 7 3 K/ W
C o ndu c tio n P erio d
C o ndu ct io n A ng le
80 70 60 50 40 0 200 400 600 800 1000 Average O n-sta te Curren t (A)
Fig. 1 - Current Ratings Characteristics
30
60 90 120 180
60 90 1 20 6 00 180 DC
80 0 10 0 0 1 2 00 1 4 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST780C..L Series
Bulletin I25192 rev. C 04/00
Maxim um Allowable Heatsin k Tem perature (C) M a x im u m A llow a b le H e at sin k T e m p e ra t ure (C ) 130 120 110 100 90 80 70 60 50 40 30 20 0 400 800 1200 1600 2000 Average O n-state Curren t (A)
Fig. 3 - Current Ratings Characteristics
C o nd uctio n A ng le
130 120 110 100 90 80 70 60 50 40 30 20 0 50 0 3 0 6 0
ST780C..L Series (Double Side Cooled) R th J-hs (DC) = 0.031 K/W
ST 7 8 0 C ..L Se rie s (D o u b le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 3 1 K / W
C o ndu c tio n Pe rio d
30
60
90
120
90 12 0 18 0 DC 1 0 00 15 0 0 2 00 0 2 5 00 3 0 00
180
A v e ra g e O n -st a t e C urre n t ( A )
Fig. 4 - Current Ratings Characteristics
Maxim um Average On-state Pow er Loss (W )
Maximu m Average O n-st ate Power Loss (W)
2500 180 120 90 60 30 RMS Lim it
3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 Average O n-state Current (A)
Fig. 6- On-state Power Loss Characteristics
2000
1500
DC 180 120 90 60 30 RMS Limit
Co n duc tio n Pe rio d
1000
C on duc tio n An g le
500
ST780C..L Series T J = 125C
ST780C..L Series TJ = 125C
0 0 400 800 1200 1600 2000 Average On -state Curren t (A)
Fig. 5- On-state Power Loss Characteristics
P e a k H a lf S in e W a v e O n -st a te C u rre n t (A )
Peak Half Sin e Wave On -state Current (A)
2 2 00 0 2 0 00 0 1 8 00 0 1 6 00 0 1 4 00 0 1 2 00 0 1 0 00 0 1
A t A n y R a te d L o a d C o n d it io n A n d W ith R a te d V RRM A p p lie d Fo llo w in g S u rg e . In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
26000 24000
M aximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction M ay Not Be M ain tained. In itial TJ = 125C 22000 No V oltage Reapplied Rated V RRM Reapplied 20000 18000 16000 14000 12000 ST780C..L Series 0.1 Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
S T 7 8 0 C ..L S e rie s 10 100
10000 0.01
1
N um b e r O f E qua l Am p litude Ha lf C yc le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST780C..L Series
Bulletin I25192 rev. C 04/00
10 0 00 In sta n ta n e o u s O n - sta t e C u rre n t (A )
TJ = 25 C 1 0 00 TJ = 125 C
ST 7 8 0 C ..L S e rie s 10 0 0 .5
1
1 .5
2
2 .5
In st a n t a n e o us O n -st a t e V o lt a g e (V )
Fig. 9 - On-state Voltage Drop Characteristics
0 .1 St e a d y S ta t e V a lu e R th J-hs = 0 .0 7 3 K / W ( Sin g le S id e C o o le d ) R th J- hs = 0 .0 3 1 K / W ( D o u b le S id e C o o le d ) 0 .0 1 ( D C O p e ra t io n )
Tra n sie n t T h e rm al Im p e da n ce Z thJ-hs ( K /W )
S T 7 8 0 C ..L S e rie s
0 .0 0 1 0 .0 0 1
0 .0 1
0. 1 Sq u a re W a v e P u lse D u ra tio n ( s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100 In sta n t a n e o u s G at e V o lta g e ( V )
R e c ta n g u la r g at e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< = 1 s (b )
Tj=-40 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
10W , 20W , 40W , 60W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
Tj=2 5 C
Tj=125 C
1 V GD IG D 0. 1 0 .0 0 1 0. 01
(1 )
(2 )
(3) (4 )
D e v ic e : S T 7 8 0 C ..L Se rie s 0 .1 1
Fre qu e n c y L im it e d by PG ( A V ) 10 1 00
In st an ta n e o u s G a te C u rre n t ( A )
Fig. 11 - Gate Characteristics
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