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Bulletin I25191 rev. C 04/00
ST730C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK)
990A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical
case style TO-200AC (B-PUK)
Units
A C A C A A KA2s KA2s V s C
ST730C..L
990 55 2000 25 17800 18700 1591 1452 800 to 1800 150 - 40 to 125
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ST730C..L Series
Bulletin I25191 rev. C 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 12 ST730C..L 14 16 18
V DRM/V RRM, max. repetitive peak and off-state voltage V
800 1200 1400 1600 1800
VRSM , maximum nonrepetitive peak voltage V
900 1300 1500 1700 1900
I DRM/I RRM max.
@ TJ = TJ max
mA
80
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current
ST730C..L
990 (375) 55 (85) 2000 17800 18700 15000 15700
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2 t
Maximum I2t for fusing
1591 1452 1125 1027
I2 t
Maximum I2t for fusing
15910 0.98
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 1.12 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 0.27 1.62 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 2000A, TJ = TJ max, tp = 10ms sine pulse
0.32
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST730C..L
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, t 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s
g r
Typical delay time Typical turn-off time
s tq 150
V = 0.67% VDRM, TJ = 25C
d
ITM = 750A, TJ = T J max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s
2
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ST730C..L Series
Bulletin I25191 rev. C 04/00
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST730C..L
500 80
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
ST730C..L
10.0 2.0 3.0 20
Units Conditions
W A T J = TJ max, t 5ms
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, t 5ms
p
T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST730C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.006 14700 (1500)
Units
C
Conditions
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
K/W N (Kg) g
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
See Outline Table
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ST730C..L Series
Bulletin I25191 rev. C 04/00
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Conduction angle
180 120 90 60 30 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.020 0.036
Rectangular conduction Units Conditions
0.006 0.010 0.015 0.021 0.036 0.006 0.011 0.015 0.021 0.036 K/W TJ = TJ max.
Single Side Double Side Single Side Double Side
Ordering Information Table
Device Code
ST
1
73
2
0
3
C
4
18
5
L
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST730C..L Series
Bulletin I25191 rev. C 04/00
Outline Table
0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 2 7 (1 .0 6 ) M A X .
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D I A. M A X . 4.7 (0.18)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
M a xim u m A l o w a b le H e a t sin k T e m p e ra t u re ( C )
M a x im u m A llo w a ble H e a ts in k Te m p e ra t ure ( C )
1 30 1 20 1 10 1 00 90 80 70 60 50 40 0 10 0 2 00 30
ST 7 3 0 C ..L S e r ie s (Sin g le S id e C o o le d ) R th J- hs (D C ) = 0 .0 7 3 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 20 0 30
S T7 3 0 C ..L Se rie s (S in g le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 7 3 K / W
Co nd uc tio n A ng le
C on duc tion Pe rio d
60 9 0 120 1 80
60 90 120 40 0 6 00
1 80 80 0
DC 10 0 0 1 2 00
300
40 0
50 0
600
7 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
A v e r a g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST730C..L Series
Bulletin I25191 rev. C 04/00
Maxim um Allow able Heatsin k Tem perature (C) M a xim u m A llo w a b le H e at sin k T e m p e ra t ure (C ) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 1400 Average O n-state Curren t (A)
Fig. 3 - Current Ratings Characteristics
C o nduc tio n A ng le
ST730C..L Series (Double Side Cooled) R th J-h s (DC) = 0.031 K/W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 4 00 80 0 30 60 90
ST 7 3 0 C ..L Se rie s (D o u b le S id e C o o le d ) R th J- hs (D C ) = 0 .0 3 1 K / W
Co nd uc tio n Pe rio d
30
60
90
120
120
180
180 DC
1 20 0
16 0 0
20 0 0
2 4 00
A v e ra g e O n - st a t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
Maxim um Average On-state Power Loss (W )
M axim um Average O n-state Pow er Loss (W )
2500 180 120 90 60 30
3500 3000 2500 2000 RMS Lim it 1500
Co n du ctio n Pe rio d
2000
RMS Limit
1500
DC 180 120 90 60 30
1000
C o nd uc tio n A ng le
1000 500 0 0 400 800 1200 1600 2000 2400 Average O n-state Curren t ( A)
Fig. 6- On-state Power Loss Characteristics
500
ST730C..L Series T J = 125C 0 200 400 600 800 1000 1200 1400
ST730C..L Series TJ = 125C
0 Average O n-state Curren t (A)
Fig. 5- On-state Power Loss Characteristics
Peak Ha lf Sine W ave On -state Current (A)
15000 14000 13000 12000 11000 10000 9000 8000 7000 1
At Any Rated Load Condition An d W ith Rated V RRM Applied Followin g Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e a k H a lf S in e W a v e O n -s ta t e C u rre n t (A )
16000
18000 17000
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P u lse Tra in D u ra t io n . C o n t ro l 16000 O f C o n d u c t io n M a y N o t Be M a in t a in e d . In it ia l T J = 1 2 5 C 15000 N o V o lt a g e R e a pp lie d R a te d V RRM R e a p p lie d 14000 13000 12000 11000 10000 9000 8000 S T7 3 0 C ..L Se rie s 0.1 P u lse T ra in D u ra tio n (s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
ST730C..L Series 10 100
7000 0.01
1
N um b e r O f E q ual A m plitud e Half Cy c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST730C..L Series
Bulletin I25191 rev. C 04/00
1 0 0 00 Instantaneous On-state Curren t (A) TJ = 2 5C TJ = 12 5C
1 00 0
ST730C..L Series 10 0 0.5
1
1 .5
2
2 .5
3
3 .5
Instan tan eous On-sta te Voltage (V )
Fig. 9 - On-state Voltage Drop Characteristics
0 .1 St e a d y S ta t e V a lu e R th J-hs = 0 .0 7 3 K / W ( Sin g le S id e C o o le d ) R th J- hs = 0 .0 3 1 K / W ( D o u b le S id e C o o le d ) 0 .0 1 ( D C O p e ra t io n )
Tra n sie n t T h e rm al Im pe da n c e Z thJ-hs (K / W )
S T 7 3 0 C ..L S e rie s
0 .0 0 1 0 .0 0 1
0 .0 1
0. 1 Sq u a re W a v e P u lse D u ra tio n ( s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100 In st an t a n e o us G a te V o lt a g e ( V )
R e c ta n g u la r g at e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< = 1 s (b )
Tj=-40 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
10W , 20W , 40W , 60W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
Tj=25 C
Tj=125 C
1 V GD IG D 0. 1 0 .0 0 1 0. 01
(1 )
(2 )
(3) (4 )
D e v ic e : S T 7 3 0 C ..L Se rie s 0 .1 1
Fre qu e n c y L im it e d by PG ( A V ) 10 1 00
In st an ta n e o u s G a te C u rre n t ( A )
Fig. 11 - Gate Characteristics
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