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Bulletin I25181 rev. C 12/96
ST173S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
175A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST173S
175 85 275 4680 4900 110 100 1000 to 1200 15 to 25 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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1
ST173S Series
Bulletin I25181 rev. C 12/96
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST173S 10 12 1000 1200
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM /IRRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 500 450 330 170 50 VDRM 50 60
ITM 180 el 320 290 190 80 50 50 85 790 810 760 510 50 VDRM 60
o
ITM 100s 550 540 490 300 50 85 4510 1970 1050 480 50 V DRM 60
ITM
Units
3310 1350 680 280 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST173S
175 85 275 4680 4900 3940 4120
Units
A C
Conditions
180 conduction, half sine wave DC @ 75C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
110 100 77 71 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1100
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST173S Series
Bulletin I25181 rev. C 12/96
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST173S
2.07 1.55 1.58 0.87
Units
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
Low level value of forward slope resistance
m 0.82 600 1000 mA
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST173S
1000 1.1 Min 15 Max 25
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST173S
500 40
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% V DRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST173S
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max., rated VDRM applied
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ST173S Series
Bulletin I25181 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST173S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Mounting surface, smooth, flat and greased
Lubricated threads
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
T J = TJ max.
Ordering Information Table
Device Code
ST
1
17
2
3
3
S
4
12
5
P
6
F
7
K
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 20 15 CL 18 CP t (s) 20 CK q 25 CJ 30 -50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH
*Standard part number.
All other types available only on request.
10 - Critical dv/dt: None L = 500V/sec (Standard value) = 1000V/sec (Special selection)
4
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ST173S Series
Bulletin I25181 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA.
(0 .3 9 .5 MI N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD C.S. 25mm 2
(0
. 86
)M
IN .
Fast-on Terminals
+I 210 (8.26)
AMP. 280000-1 REF-250
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A * 35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST173S Series
Bulletin I25181 rev. C 12/96
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C) 130 ST173S Series R thJC (DC) = 0.105 K/W 120
130 120 110
ST173S Series R thJC (DC) = 0.105 K/W
110
Conduction Period
Conduction Angle
100 90 30 80 70 0 40 80 120 160 200 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90
60 90 120 180
30
60
90 120
180
80 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
DC 240 280
Maximum Average On-state Power Loss (W)
350
SA R th
16 0.
1 0.
300 250 200
180 120 90 60 30 RMS Limit
W K/
W K/
/W
0. 2K
. 08 =0 W K/
0. 3
a el t -D
K/ W
0. 4
R
K/ W
150 100 50
0
Conduction Angle
0.5 K/ W
0 .8 K/W
1. 2 K/ W
ST173S Series TJ = 125C 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500 450 400 350 300 250 200 RMS Limit 150 100 50 0 0 40 80 120 160 200 240 25 280 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C)
Conduction Period
DC 180 120 90 60 30
R
S th A
0. 1
=
K/
W
0. 08
0. 1 6K
0. 2
0 .3
K/ W
/W
-D
K/W
K /W
elt a
R
ST173S Series TJ = 125C
K/ W 0 .5 K /W 0 .8 K/ W
1.2 K/W
0 .4
Fig. 4 - On-state Power Loss Characteristics
6
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ST173S Series
Bulletin I25181 rev. C 12/96
Peak Half Sine Wave On-state Current (A)
4500
Peak Half Sine Wave On-state Current (A)
4000
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
5000
3500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4500 Of Conduction May Not Be Maintained. Initial TJ = 125C 4000 No Voltage Reapplied Rated VRRMReapplied 3500 3000 2500 2000 1500 0.01 ST173S Series
3000
2500 ST173S Series 2000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
10000 Instantaneous On-state Current (A) ST173S Series
1 Steady State Value R thJ C = 0.105 K/W (DC Operation) 0.1
1000 TJ = 25C TJ = 125C
0.01 ST173S Series
100 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V)
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Charge - Qrr (C)
ITM = 500 A
Maximum Reverse Recovery Current - Irr (A)
250 ST173S Series TJ = 125 C
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
I
TM
200
300 A 200 A
150
= 500 A 300 A 200 A 100 A 50 A
100 A
100
50 A
50
ST173S Series TJ = 125 C
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
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ST173S Series
Bulletin I25181 rev. C 12/96
1E4
Peak On-state Current (A)
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% V DRM
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% VDRM
1E3
1500 2000 2500 3000
1000
500
400
200
100
50 Hz
1000 1500 500 400 200 100 50 Hz
tp
ST173S Series Sinusoidal pulse TC = 60C
2000 2500 3000 tp
ST173S Series Sinusoidal pulse TC = 85C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2000 1500 1000 500
400 200 100
50 Hz
500 1000 1500 2000
400 200
100
50 Hz
2500 3000
1E2
5000
ST173S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
2500 3000 5000
tp
ST173S Series Trapezoidal pulse T C = 85C di/dt = 50A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
500 1500 1000
400
200
100
50 Hz
400 500 1000 1500 2000 200 100
50 Hz
1E2
5000 10000
2500
2000
tp
ST173S Series Trapezoidal pulse TC = 60C di/dt = 100A/s
2500 5000 10000
tp
ST173S Series Trapezoidal pulse TC = 85C di/dt = 100A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST173S Series
Bulletin I25181 rev. C 12/96
1E5
ST173S Series Rectangular pulse
Peak On-state Current (A)
tp
di/dt = 50A/s
1E4
20 jo ules per pulse 1 2 4 7.5
1E3
0.3 0.2 0.1
0.5
2 0.4 0.5 1
3
5
10
20 joules per pulse
0.3 0.2 0.1
1E2
ST173S Series Sinusoidal pulse tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST173S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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