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| PD- 91848D IRLMS6802 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.050 T op V iew Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -5.6 -4.5 -45 2.0 1.3 0.016 31 12 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 62.5 Units C/W www.irf.com 1 01/18/01 IRLMS6802 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.60 1.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.005 --- V/C Reference to 25C, ID = -1mA --- 0.050 VGS = -4.5V, ID = -5.1A --- 0.100 VGS = -2.5V, ID = -3.4A --- -1.2 V VDS = VGS, I D = -250A --- --- S VDS = -10V, I D = -0.80A --- -1.0 VDS = -16V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- -100 VGS = -12V nA --- 100 VGS = 12V 11 16 ID = -4.5A 2.2 3.3 nC VDS = -10V 2.9 4.3 VGS = -5.0V 12 --- VDD = -10V 33 --- ID = -1.0A ns 70 --- RG = 6.0 72 --- RD = 10 1079 --- VGS = 0V 220 --- pF VDS = -10V 152 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 74 45 -2.0 A -45 -1.2 110 67 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.6A, VGS = 0V TJ = 25C, IF = -3.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Starting TJ = 25C, L = 6.8mH RG = 25, IAS = -3.0A. (See Figure 12) Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLMS6802 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 10 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1 1 -1.50V -1.50V 20s PULSE WIDTH T = 25 C J 1 10 100 0.1 0.1 0.1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -5.6A TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.0 V DS = -15V 20s PULSE WIDTH 4.0 2.0 3.0 5.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS6802 1600 -VGS , Gate-to-Source Voltage (V) 1200 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = -4.5A 12 C, Capacitance (pF) Ciss VDS = -10V 9 800 6 400 C oss C rss 1 10 100 3 0 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 -ID , Drain Current (A) I 100 10us 10 TJ = 150 C TJ = 25 C 1 100us 1ms 1 10ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS6802 6.0 80 EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 60 ID -1.3A -2.4A BOTTOM -3.0A TOP 4.0 3.0 40 2.0 20 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 P DM t1 t2 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS6802 Package Outline Micro6 3. 00 (. 11 8 ) 2. 80 (. 11 1 ) L EAD ASSIG N M EN T S -B D D S R EC O M MEN D ED FO O T PR IN T 2 X 0 . 95 (.0 375 ) 6 X (1 .06 (.0 42 ) 1 .75 (.0 68 ) 1 .50 (.0 60 ) -A - 6 1 5 2 4 3 3 .00 (.11 8 ) 2 .60 (.10 3 ) 6 1 5 2 4 3 2.2 0 (.0 87 ) 0. 95 ( .03 75 ) 2X 0.1 5 D 0.5 0 (.0 19 ) 6X 0.3 5 (.0 14 ) (.00 6 ) M C A S B S D G 6X 0. 6 5 (. 02 5 ) 0 -10 1 .30 (.0 51 ) 0 .90 (.0 36 ) -C 0 .15 (.00 6 ) M A X. 1.4 5 (. 057 ) 0.9 0 (. 036 ) 0 .10 (.00 4 ) 6 SUR F AC ES O O 6X 0 .20 (.00 7 ) 0 .09 (.00 4 ) 0.6 0 (. 023 ) 0.1 0 (. 004 ) N O TE S : 1. D IM E N S IO N IN G & T O LE R A N C I N G PE R A NS I Y 1 4.5 M -198 2. 2. C O N T R O L LIN G D IM E NS IO N : M IL LI M E TE R . 3. D IM E N S IO N S A R E S HO W N IN M IL LIM E T E R S (I N C H E S ). Part Marking Information Micro6 THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D 2C YW TOP WAFER LOT NUMBER CODE XXXX BOT TOM 24 25 26 X Y Z PART NUMBER CODE REFERENCE: 2A = IRLMS 1902 2B = IRLMS 1503 2C = IRLMS 6702 2D = IRLMS 5703 2E = IRLMS 6802 2F = IRLMS 4502 2G = IRLMS 2002 2H = IRLMS 6803 WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF 50 51 52 X Y Z 6 www.irf.com IRLMS6802 Tape & Reel Information Micro6 8mm 4mm F E E D D IR E C T IO N N O TE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 17 8.00 ( 7 .0 08 ) MAX. 9.9 0 ( .39 0 ) 8.4 0 ( .33 1 ) NO TES: 1. C O N T R O L LIN G D IM E N S IO N : M ILLIM ET E R . 2. O U T L IN E C O N F O R M S TO E IA -4 81 & E IA -541 . This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/01 www.irf.com 7 |
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