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| PD - 94271A HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL5NJ7413 BVDSS IRL5NJ7413 30V, N-CHANNEL 30V RDS(on) 0.014 ID 22A* Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 22* 88 75 0.60 16 190 22 7.5 1.0 -55 to 150 300 (for 5 s) 1.0 Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 7/6/01 IRL5NJ7413 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 30 -- -- -- 1.0 30 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.027 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.014 0.020 -- -- 25 250 100 -100 70 20 23 20 80 80 80 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 22A VGS = 4.5V, ID = 22A VDS = VGS, ID = 250A VDS = 10V, IDS = 22A VDS = 30V ,VGS=0V VDS = 24V, VGS = 0V, TJ =125C VGS = 16V VGS = -16V VGS =10V, ID = 22A VDS = 24V VDD = 15V, ID = 22A, VGS =10V, RG = 6.2 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1640 660 80 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 22* 88 1.0 120 300 Test Conditions A V nS nC Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.67 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL5NJ7413 100 VGS TOP 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 VGS 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 1 2.7V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 2.7V 20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 T J = 150C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 22A ID, Drain-to-Source Current ( ) 1.5 10 1.0 T J = 25C 0.5 VDS = 15V 15 20s PULSE WIDTH 1 2.5 3.0 3.5 4.0 4.5 5.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL5NJ7413 3000 2500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 22A 16 C, Capacitance (pF) VDS = 24V VDS = 15V VDS = 6V 2000 Ciss C oss 12 1500 8 1000 500 4 C rss 0 1 10 100 0 0 20 FOR TEST CIRCUIT SEE FIGURE 13 40 60 80 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 150 C ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100 TJ = 25 C 1 10 Tc = 25C Tj = 150C Single Pulse 1 1 10 1ms 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL5NJ7413 60 LIMITED BY PACKAGE 50 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 40 -VDD VGS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.001 0.01 P DM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL5NJ7413 400 EAS , Single Pulse Avalanche Energy (mJ) 15V 300 TOP BOTTOM ID 10A 14A 22A VDS L D R IV E R RG D .U .T. IA S 200 + - VD D A VGS 20V tp 0 .01 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL5NJ7413 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.8mH Peak IAS =22A, VGS = 10 V, RG= 25 ISD 22A, di/dt 140 A/s, Pulse width 300 s; Duty Cycle 2% VDD 30V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 www.irf.com 7 |
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