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PD - 94184C
SMPS MOSFET
IRL3713 IRL3713S IRL3713L
HEXFET(R) Power MOSFET RDS(on) max (m) )
3.0@VGS = 10V
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l l
VDSS
30V
ID
260A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
TO-220AB IRL3713
D2Pak IRL3713S
TO-262 IRL3713L
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 260 180 1040 330 170 2.2 -55 to + 175
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
0.45 --- 62 40
Units
C/W
Notes through are on page 11
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1
01/02/02
IRL3713/S/L
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.027 2.6 3.3 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.0 VGS = 10V, ID = 38A m 4.0 VGS = 4.5V, ID = 30A 2.5 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 20V nA -200 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 76 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 75 24 37 61 16 160 40 57 5890 3130 630 Max. Units Conditions --- S VDS = 15V, ID = 30A 110 ID = 30A --- nC VDS = 15V --- VGS = 4.5V 92 VGS = 0V, VDS = 15V --- VDD = 15V --- ID =30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
1530 46
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- 260 A --- 1040 1.3 --- 110 210 120 240 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.80 --- 0.68 --- 75 --- 140 --- 78 --- 160
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, V GS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A, VR=20V di/dt = 100A/s TJ = 125C, IF = 30A, VR=20V di/dt = 100A/s
2
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IRL3713/S/L
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP
1000
100
VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP
10
2.5V
1
2.5V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
1 0.1
20s PULSE WIDTH T = 175 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
ID = 260A
100
TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
1.5
1.0
10
TJ = 25 C
0.5
1 2.5
V DS = 15V 20s PULSE WIDTH 4.0 3.0 3.5 4.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRL3713/S/L
100000 14 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 30A
VGS , Gate-to-Source Voltage (V)
12
VDS = 24V VDS = 15V VDS = 6V
C, Capacitance(pF)
10
10000
Ciss Coss
8
6
1000
Crss
4
2
100 1 10 100
0 0 40 80 120 160
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 175 C
1000
10
ID , Drain Current (A)
10us
100us
100
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
T C = 25 C T J = 175 C Single Pulse
1 10
1ms 10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRL3713/S/L
300
LIMITED BY PACKAGE
250
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
200
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
150
100
Fig 10a. Switching Time Test Circuit
VDS 90%
50
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001
P DM t1 t2 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3713/S/L
3000
1 5V
EAS , Single Pulse Avalanche Energy (mJ)
2500
VD S
L
D R IV E R
TOP BOTTOM ID 30A 38A 46A
2000
RG
VGS 20V
D .U .T IA S tp 0 .0 1
+ - VD D
A
1500
Fig 12a. Unclamped Inductive Test Circuit
1000
500
V (B R )D SS tp
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRL3713/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRL3713/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 )
3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -A6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 )
-B4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 )
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 )
3X 1 .4 0 (.0 5 5 ) 3X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X N O TE S :
0 .93 (.0 3 7 ) 0 .69 (.0 2 7 ) M B AM
3X
0.5 5 (.0 2 2 ) 0.4 6 (.0 1 8 )
0 .3 6 (.0 1 4 )
2 .9 2 (.11 5 ) 2 .6 4 (.10 4 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
8
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IRL3713/S/L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
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9
IRL3713/S/L
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
AS S E MBLY LOT CODE
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
10
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IRL3713/S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 )
1 5 .42 (.60 9 ) 1 5 .22 (.60 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IR E C T IO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4
3 30 .00 ( 14.1 73 ) MAX.
6 0.0 0 (2.36 2) M IN .
Notes:
N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26 .40 (1 .03 9) 24 .40 (.9 61 ) 3
30.4 0 (1.19 7) M A X. 4
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220A package
Starting TJ = 25C, L = 1.4mH
RG = 25, IAS = 46A,VGS=10V
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/02
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