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Bulletin I27132 rev. G 02/02
IRK.71, .91 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
75 A 95 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV) @ 85C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It
2 2
IRK.71
75 165 1665 1740 13.86 12.56 138.6
IRK.91
95 210 1785 1870 15.91 14.52 159.1
Units
A A A A KA 2s KA2s KA 2s V
o o
@ 50Hz @ 60Hz
I t V RRM range TSTG TJ
(*) As AC switch.
400 to 1600 - 40 to 125 - 40 to125
C C
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1
IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 06 08 IRK.71/ .91 10 12 14 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V
400 600 800 1000 1200 1400 1600
IRRM IDRM 125C mA
V
500 700 900 1100 1300 1500 1700
V
400 600 800 1000 1200 1400 1600
15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 (1) I2t for time tx = I2t x tx (4) I > x IAV 150 A/s 1.59 1.58 V 138.6 0.82 0.85 3.00 2.90 VT(TO) Max. value of threshold 210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 KA2s V m KA2s 75 95 180o conduction, half sine wave, TC = 85oC
IRK.71
IRK.91
Units
Conditions
I(RMS)
t=8.3ms reapplied
or
I(RMS)
Sinusoidal half wave, Initial TJ = TJ max.
t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied Low level (3) High level (4) Low level High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = TJ max (3) TJ = TJ max TJ = 25C Initial TJ = TJ max.
TJ = 25oC, from 0.67 VDRM, ITM = x IT(AV), I = 500mA, tr < 0.5 s, tp > 6 s TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x x IAV < I < x IAV
g
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
2
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
Triggering
Parameters
PGM IGM Max. peak gate power PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative
IRK.71
12 3.0 3.0 10 4.0 2.5 1.7 270 150 80
IRK.91
12 3.0 3.0
Units
W A
Conditions
V
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
VGD IGD
0.25 6
V mA
TJ = 125oC, rated VDRM applied TJ = 125oC, rated VDRM applied
Blocking
Parameters
IRRM IDRM Max. peak reverse and off-state leakage current at VRRM, VDRM VINS RMS isolation voltage 2500 (1 min) 3500 (1 sec) 500 V V/s 15 mA TJ = 125 oC, gate open circuit 50 Hz, circuit to base, all terminals shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit
IRK.71
IRK.91
Units
Conditions
dv/dt Max. critical rate of rise of off-state voltage (5)
(5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction operating temperature range Storage temp. range resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm gr (oz) JEDEC 0.165
IRK.71
IRK.91
Units
C
Conditions
- 40 to 125 - 40 to 125 0.135 K/W Per module, DC operation Mounting surface flat, smooth and greased
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound
RthJC Max. internal thermal
R Conduction (per Junction)
Devices
IRK.71 IRK.91
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
180o 0.06 0.04 120o 0.07 0.05 90o 0.09 0.06 60o 0.12 0.08 30o 0.18 0.12 180o 0.04 0.03
Rect. wave conduction
120o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12
Units
C/W
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3
IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
Ordering Information Table
Device Code IRK.92 types With no auxiliary cathode
IRK
1 1 2 3 4 5 6 -
T
2
91
3
/
16
4
A
5
S90
6
Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT92/16A etc. * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1) ~
IRKH
(1) ~
IRKL
(1) ~
IRKN
(1)
-
+ (2)
+ (2)
+ (2)
(2)
+
(3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5)
(3)
(3) K2 G2 (7) (6)
(3)
+
G1 K1 (4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com
IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
M axim um A llo w a ble C ase Te m per ature ( C) M axim um A llo w able C a se Te m peratur e ( C) 130 120 110
C o nduction Ang le
130 120 110
IR K.71.. Series R thJC (DC ) = 0.33 K/W
IRK.71.. Series R thJC (D C ) = 0 .3 3 K/W
C o nd u ction Pe rio d
100 90 80 70 0 10 20 30 40 50 60 70 80 A vera g e O n -sta te C urre nt (A )
100 90 30 80 70 0 20 40 60 80 100 120 A vera g e O n-sta te C urren t (A ) 60 90 1 20 1 80 DC
30
60
90
120 180
Fig. 1 - Current Ratings Characteristics
M axim um A verage O n-state Pow er Loss (W ) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 A verag e O n -sta te C urre nt (A ) 18 0 12 0 90 60 30 RM S Lim it M axim um Avera ge O n-state Po w er Loss (W ) 140 120 100 80
Fig. 2 - Current Ratings Characteristics
DC 180 120 90 60 30 RM S Lim it
60
C o n d u c tio n P e rio d
C o ndu ction Ang le
40 20 0 0 20 40 60 80 100 120 A vera g e O n -state C urre n t (A) IRK.71.. Series Per Ju n ctio n T J = 125 C
IR K.71 .. Series Per Ju nctio n T J = 12 5 C
Fig. 3 - On-state Power Loss Characteristics
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100
Nu m b e r O f Eq ua l Am p litu d e Ha lf C y c le C u rre n t P u lse s (N)
Fig. 4 - On-state Power Loss Characteristics
P eak Half Sine W ave On -state C urrent (A ) 1800 1600 1400 1200 1000 800
Pe ak H alf Sine W ave O n-state Curre nt (A )
A t A ny Ra te d Lo a d C o nditio n A nd W ith Rate d VRR M A p p lie d Fo llo w ing Surg e . Initia l T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
M axim u m N o n Re p etitive Su rg e C urre n t V e rsus Pu lse Train D uration . C o ntro l O f C o n duc tio n M a y N ot Be M a inta ine d . Initial T J = 125 C N o V olta g e Re ap plie d Ra te d V RRMRe ap p lie d
IRK.71.. Se ries Pe r Junc tion
IRK.71.. Se rie s Pe r Junc tion 0.1 P ulse Tra in D ura tio n (s) 1
600 0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
250 M axim um Total On-sta te P ow er Lo ss (W ) 180 120 90 60 30
SA R th
0. 2 K/ W
3 0.
200
=
K/ W
K/ W 4
0.
0. 1K /W
0.
5
150
0.7
K/
-D
W
W
el ta
K/
R
100
Cond uction A ngle
1K /W
1 .5
K/ W
50
IRK .71.. Se rie s Pe r M o d ule T J = 125 C 0 20 40 60
3 K/ W
0 80 100 120 140 160 180 0
20
40
60
80
100
120
140
Tota l R M S O utp ut C urre nt (A )
M a xim um Allo w ab le A m b ie n t Te m p e ra ture ( C )
Fig. 7 - On-state Power Loss Characteristics
600 M axim um Tota l Pow e r Loss (W ) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Total O utp ut C urren t (A ) M a xim um A llo w a b le A m bie n t Te m p e ra ture ( C ) 2 x IR K.71.. Series Sin gle Ph ase Brid ge C o n nected T J = 125 C
180 (Sin e ) 180 (Re c t)
h Rt SA
= 0. 1 K/ W
0.
2K
-D
/W
W
e lt a
0. 3
R
K/
0 .5
K/W
1 K/ W
2 K/ W
Fig. 8 - On-state Power Loss Characteristics
800 M axim um T otal P ow er Lo ss (W ) 700
R
600 500 400 300 200 100 0 0 40 80 120 160 200 0 240 3 x IR K.71 .. Series Three Ph a se Brid g e C o n nected T J = 1 25 C
0 .5
S th
=
A
0.
1
120 (Rect)
K/
0 .2
W
K/
W
-D
el
ta
0 .3
R
K/ W
K/W
1 K/W
20
40
60
80
100
120
140
To ta l O utp ut C urre n t (A)
M a xim um Allo w ab le Am b ien t Te m pe ra ture ( C )
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
M axim um Allo w able Ca se Tem p era tur e ( C ) IRK.91.. Series R thJC (D C ) = 0.27 K/W M axim um Allo w ab le C ase Tem perature ( C ) 130 120 110
C o nd uc tio n A ng le
130 120 110
IR K.9 1 .. Serie s R thJC (D C ) = 0.27 K/W
C o n du c tio n P e rio d
100 90 80 70 0 20 40 60 80 100 Averag e O n-state C urre n t (A)
100 90 80 70 0 20 40 60 80 100 120 140 160 Average O n -sta te C urren t (A)
30
60
30 60 90 12 0 180 DC
90 120 180
Fig. 10 - Current Ratings Characteristics
M a xim u m Ave ra ge O n-sta te Pow er Lo ss (W ) M a xim um A ve rag e O n -state Po w er Lo ss (W ) 140 120 100 80 60
C o n d uc tio n A ng le
Fig. 11 - Current Ratings Characteristics
180 160 140 120 100 RM S Lim it 80 60 40 20 0 0 20 40 60 80 100 120 140 160 A verag e On -sta te C urrent (A)
C o nd uctio n P erio d
1 80 1 20 90 60 30 R M S Lim it
DC 180 120 90 60 30
40 20 0 0 20 40 60 80 100 Avera g e O n -sta te C urre n t (A ) IRK.91 .. Series Per Ju nctio n T J = 125 C
IR K.91.. Series Per Jun ctio n T J = 125 C
Fig. 12 - On-state Power Loss Characteristics
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100
Nu m b e r O f E qu a l Am plitu de Ha lf C yc le C u rre n t Pu lse s (N)
Fig. 13 - On-state Power Loss Characteristics
1800 1600 1400 1200 1000 800
Pea k Half Sin e W a ve O n-state C urrent (A)
Pe ak Half Sin e W ave O n -sta te C urre nt (A)
A t A ny Ra te d Lo a d C o nd itio n A nd W ith Rate d V RR M A pplie d Fo llow ing Surg e .
In itial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
M a xim um N o n Re pe titive Surg e C u rrent V ersus Pu lse Train D uratio n . C ontro l O f C o nd uc tio n M a y N o t Be M a inta ine d . Initia l T J = 125 C N o V o ltag e Re a p p lied Ra te d V RRM Re a p p lied
IRK.91.. Se rie s Pe r Junc tion
IRK.91.. Se rie s Per Junction 0.1 Pulse Train D ura tio n (s) 1
600 0.01
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
350 M axim um Total On-sta te Po w e r Loss (W )
S R th
300
250 200
180 120 90 60 30
0.
A
2
K/
=
W
0. 1
0.
K/
3
K/
W
W
-D e lt
0 .5
a R
150
100 50 0 0
K/
W
Conduction Angle
0 .7
K/
W
IRK.91.. Se rie s Pe r M od ule T J = 125 C 40 80 120 160 200
1K /W 1 .5 K /W
3 K/ W
240 0
20
40
60
80
100
120
140
To tal R M S O utp ut C urre nt (A )
M a xim um Allow a ble Am b ien t Te m p erature ( C )
Fig. 16 - On-state Power Loss Characteristics
600 M ax im um Total Pow er Loss (W ) 500 400 300 200 100 0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 Total O utp ut C urren t (A) M a xim um A llow a ble A m b ient Tem perature ( C ) 2 x IR K.91 .. Series Single Ph ase Brid ge C on n ected T J = 125 C
180 (Sine ) 180 (R e c t)
h Rt SA
= 0. 1 K/
0.
2
W
K/
-D
W
el ta
0 .3
R
K/
W
0 .5
K/ W
1 K/ W
2 K/ W
Fig. 17 - On-state Power Loss Characteristics
900 M a xim um Total Pow er Loss (W ) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 240 280 0 20 40 60 80 100 120 140 Tota l O utp ut C urren t (A) M ax im um A llo w a b le A m b ie n t Te m p e ra ture ( C ) 3 x IRK.91.. Series Th ree Ph a se Brid ge C o nnected T J = 125 C
0 .5
R
th SA
=
0.
1
1 20 (R ect)
K/
W -D el ta
0 .2
K/
W
R
0 .3
K/
W
K /W
1 K/ W
Fig. 18 - On-state Power Loss Characteristics
8
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
1000 Instanta ne ous O n-state C urre nt (A) In stan ta neous O n-state C urrent (A ) 1000
100
100
T J= 25 C 10 T J = 125 C
T J = 25 C 10 T J = 125 C IRK.71.. Series Per Jun ctio n 1 0.5 1 1.5 2 2.5 3 3.5 4
IRK.91.. Series Per Ju nctio n 1 0.5 1 1.5 2 2.5 3 3.5
Insta n tan eo us O n -sta te V olta g e (V )
In sta n ta n eo us O n -sta te V olta g e (V )
Fig. 19 - On-state Voltage Drop Characteristics
M a xim um Re verse Re co very C ur re nt - Irr (A) M axim um Re verse Rec ove ry C ha rge - Qrr ( C ) 700 600 500
50 A
Fig. 20 - On-state Voltage Drop Characteristics
140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A / s) IRK.7 1.. Series IRK.9 1.. Series T J = 125 C
I TM = 200 A 100 A 50 A 20 A 10 A
IRK.71.. Series IRK.91.. Series T J = 1 25 C
I TM = 200 A 100 A
400 300 200 100 10 20 30 40 50 60 70 80 90 100 Rate O f Fa ll O f O n -state C urre n t - d i/dt (A / s)
20 A
10 A
Fig. 21 - Recovery Charge Characteristics
Transien t The rm al Im peda nce Z thJC (K /W ) 1 Stead y Sta te V a lu e: R thJC = 0 .3 3 K /W R thJC = 0 .2 7 K /W (D C O p era tio n ) 0.1 IR K.7 1 .. Series IR K.9 1 .. Series
Fig. 22 - Recovery Current Characteristics
Per Ju nctio n
0.01 0.001
0.01
0.1 Sq u a re W av e P u lse D u ra tio n (s)
1
10
Fig. 23 - Thermal Impedance ZthJC Characteristics
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IRK.71, .91 Series
Bulletin I27132 rev. G 02/02
100 Instantane ous G ate V oltage (V)
Recta ng ula r g a te p ulse a )Recom m end ed lo a d line for ra ted di/d t: 20 V, 20 o hm s tr = 0.5 s, tp >= 6 s b )Reco m m end ed lo a d line for <= 30% ra ted d i/d t: 15 V, 40 ohm s tr = 1 s , tp >= 6 s
(1) (2) (3) (4) (a)
TJ = -40 C
PGM PGM PGM PGM
= = = =
200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s
10
(b)
TJ = 25 C TJ = 1 25 C
1
(4)
(3) (2)
(1 )
VG D
IG D
0.1 0.001
IR K.7 1../.9 1.. Series Frequenc y Lim ite d by PG (AV ) 0.1 1 10 100 1000
0.01
Instantaneo us G ate C urre nt (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02
10
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