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| Bulletin I27130 rev. F 02/02 IRK.26 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 27 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) or IF(AV) @ 85C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It I2t VRRM range TSTG TJ (*) As AC switch. 2 IRK.26 27 60 400 420 800 730 8000 400 to 1600 - 40 to 125 - 40 to125 Units A A A A A2s A2s A2s V o o @ 50Hz @ 60Hz C C www.irf.com 1 IRK.26 Series Bulletin I27130 rev. F 02/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.26 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 125C mA 15 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 60 A 400 420 335 350 470 490 I2t Max. I2t for fusing 800 730 560 510 1100 1000 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/s 1.95 V 8000 0.92 0.95 12.11 11.82 A2s V m As 2 IRK.26 27 27 Units Conditions 180o conduction, half sine wave, TC = 85oC I(RMS) t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms reapplied or I(RMS) Sinusoidal half wave, Initial TJ = TJ max. No voltage 100% VRRM reapplied TJ = 25oC, no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied TJ = TJ max TJ = TJ max TJ = 25oC Initial TJ = TJ max. t= 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = 25oC, from 0.67 VDRM, ITM = x I T(AV), I = 500mA, g VT(TO) Max. value of threshold tr < 0.5 s, tp > 6 s TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x x IAV < I < x IAV (1) I2t for time tx = I2t x tx (4) I > x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.26 Series Bulletin I27130 rev. F 02/02 Triggering Parameters PGM IGM Max. peak gate power IRK. 26 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT VGD IGD Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C o Anode supply = 6V resistive load Anode supply = 6V resistive load mA V mA TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) 3500 (1 sec) dv/dt Max. critical rate of rise 500 V/s V 50 Hz, circuit to base, all terminals shorted TJ = 125oC, linear to 0.67 VDRM, 15 mA TJ = 125oC, gate open circuit IRK. 26 Units Conditions (5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT26/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm gr (oz) JEDEC IRK.26 - 40 to 125 - 40 to 125 0.31 Units Conditions C RthJC Max. internal thermal Per module, DC operation K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound R Conduction (per Junction) Devices IRK.26 (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.23 120o 0.27 90o 0.34 60o 0.48 30o 0.73 180o 0.17 Rect. wave conduction 120o 0.28 90o 0.36 60o 0.49 30o 0.73 Units C/W www.irf.com 3 IRK.26 Series Bulletin I27130 rev. F 02/02 Ordering Information Table Device Code IRK.27 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 - T 2 26 3 / 16 4 A 5 S90 6 Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs * * Available with no auxiliary cathode. To specify change: e.g. : IRKT27/16A etc. 26 to 27 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.26 Series Bulletin I27130 rev. F 02/02 M ax im um Allow ab le C ase T em p era tu re ( C ) M axim um Allo w ab le Case Tem p era ture ( C ) 130 IRK.26.. Se ries R thJ C (D C ) = 0.62 K/W 120 130 IRK.26.. Se ries R thJC (D C ) = 0.62 K/W 120 110 C o nd uctio n Angle 110 C ond uctio n P erio d 100 30 90 60 90 120 100 30 60 90 180 90 120 180 DC 40 50 80 0 5 10 15 20 25 30 A ve ra g e O n-sta te C urre n t (A ) 80 0 10 20 30 Avera ge O n-sta te C urrent (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics M axim um Avera ge O n-sta te Po w e r Loss (W ) M a xim um A verag e O n-sta te Po w e r Loss (W ) 50 40 180 120 90 60 30 RM S Lim it 70 60 50 40 30 C ond uctio n Perio d 30 DC 180 120 90 60 30 RM S Lim it 20 C o nd uctio n An gle 10 IRK.26.. Serie s Per Jun ction T J = 125 C 0 5 10 15 20 25 30 20 10 0 0 10 20 30 40 50 Avera g e O n-sta te C urre nt (A) IRK.26.. Se ries Pe r Jun ctio n T J = 125 C 0 A ve ra g e O n -sta te C urren t (A ) Fig. 3 - On-state Power Loss Characteristics 400 4 00 Fig. 4 - On-state Power Loss Characteristics Pe a k Ha lf Sin e W a ve O n-sta te C urre nt (A) 350 A t A ny Rated Loa d Condition A nd W ith Rate d VRRM A pplie d Follow ing Surg e . In itia l T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s Pea k H alf Sin e W ave On -sta te C urren t (A) 3 50 300 3 00 M a xim um No n R ep etitive Surg e C urrent V e rsu s Pulse Tra in D uration. Co ntrol O f C onductio n M ay N o t Be M aintained . In itia l T J = 125 C N o V o lta g e Re ap p lie d Ra ted VRRM Rea pp lie d 250 2 50 200 IRK .26.. Serie s Pe r Ju n c tion 150 1 10 100 N um b er O f Eq ua l Am p litu d e H alf Cy cle Current P ulses (N ) 2 00 IRK.26.. Series P er Jun c t ion 1 50 0 .01 0.1 Pulse Train D ura tio n (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.26 Series Bulletin I27130 rev. F 02/02 100 M axim um Total On -sta te Pow er Lo ss (W ) 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 0 C onduction Ang le 2K / 180 120 90 60 30 R th S A 0 .3 0 .5 K/ 0. 7 K/ K/ W 1 K/ W = 0 .1 W W K /W 1. 5 K/ lt a - De W W R 3K /W 4 K/ W IRK .26.. Se rie s Pe r M o d ule T J = 125 C 8 K /W 20 40 60 80 100 120 140 Tota l R M S Ou tput C urre nt (A ) M a xim um Allow able Am b ient T em pera ture ( C ) Fig. 7 - On-state Power Loss Characteristics 250 SA R th 0.2 0. M axim um T ota l Pow er Loss (W ) K/ 3 K/ .1 =0 W 200 0. 5 K/ K/ W K/W -D 150 100 180 (Sine ) 180 (R e ct) W el t 0. 7 aR W 1K /W 1 .5 K/W 50 2 x IRK.26.. Se rie s Sin gle Ph a se Brid g e C on n ec te d T J = 125 C 0 10 20 30 40 50 0 60 3 K /W 8 K/W 0 20 40 60 80 100 120 140 To ta l O utp ut C urre n t (A ) M a xim um Allow a ble Am b ien t T em pe ra ture ( C ) Fig. 8 - On-state Power Loss Characteristics 350 S R th 0. M axim um Tota l Pow er Lo ss (W ) 300 0. 3 A 2 K/ W K/ W .1 =0 K/ 250 200 150 100 50 0 0 10 20 30 40 50 60 70 0 80 3 x IRK.26.. Serie s Th re e Ph a se B ridg e C o nn e c ted T J = 125 C 120 (Re c t) W 0. 4 e -D 0.5 0.7 K/ W W lt a K/ R K /W 1 K/ W 1 .5 K /W 3 K/ W 20 40 60 80 100 120 140 To ta l Outp ut C urre nt (A) M a xim um Allo w ab le Am bien t Te m p era ture ( C ) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.26 Series Bulletin I27130 rev. F 02/02 1000 Insta nta ne ous O n-sta te C urre nt (A) 100 T J = 25 C 10 T J = 125 C IRK.26.. Se rie s Per Jun c t io n 1 0 1 2 3 4 5 6 7 In sta n ta ne o us O n -sta te V o lta g e (V ) Fig. 10 - On-state Voltage Drop Characteristics Transient T he rm al Im pe dance Z thJ C (K/W ) 1 Stea dy State Va lu e: R thJC = 0 .6 2 K /W (D C O p era tio n) 0.1 IR K.2 6 .. Series 0.01 0.001 0.01 0.1 Sq u a re W a v e Pu lse D u ra tio n (s) 1 10 Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous G ate V oltage (V ) R ect a n g ula r g a te p ulse a )R ec o m m e n d e d lo a d line for ra ted d i/d t: 20 V , 30 o h m s tr = 0.5 s, t p > = 6 s b )R ec o m m e n d e d lo a d lin e for <= 30% ra te d d i/d t: 20 V , 65 o h m s 10 tr = 1 s, tp > = 6 s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 100 W , tp = 500 s 50 W , tp = 1 m s 20 W , tp = 25 m s 10 W , tp = 5 m s (a) (b ) TJ = -40 C TJ = 25 C T J = 125 C 1 VGD IG D 0.1 0.001 (4) (3) (2) (1) IRK.26.. Se ries 0.01 0.1 1 Frequen c y Lim ite d by PG (AV ) 10 100 1000 Instantaneous G ate C urre nt (A) Fig. 12- Gate Characteristics www.irf.com 7 IRK.26 Series Bulletin I27130 rev. F 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 8 www.irf.com |
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