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PD - 90884B
RADIATION HARDENED POWER MOSFET S URFACE MOUNT (SMD-1)
Product Summary
Part Number Radiation Level IRHN7054 100K Rads (Si) IRHN3054 300K Rads (Si) IRHN4054 600K Rads (Si) IRHN8054 1000K Rads (Si) R DS(on) 0.027 0.027 0.027 0.027 ID 35A 35A 35A 35A
IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603
RAD Hard HEXFET TECHNOLOGY
(R)
QPL Part Number
JANSR2N7394U JANSF2N7394U JANSG2N7394U JANSH2N7394U
SMD-1
International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET(R) technol-
Features:
! ! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page 35 30 283 150 1.2 20 500 35 15 3.5 -55 to 150 300 (5sec) 2.6 (Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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8/9/01
IRHN7054
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
60 2.0 12
Electrical Characteristics
Parameter
Typ Max Units
0.053 4.0 0.027 0.030 4.0 25 250 100 -100 200 60 75 27 100 75 75 V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 30A VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 30A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

4100 2000 560

pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
35 283 1.4 280 2.2
Test Conditions
A
V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
6.6
Test Conditions
0.83 C/W Soldered to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHN7054
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min 60 2.0
100K Rads(Si)
Max
300 - 1000K Rads (Si)
Min
Max
Units Units V nA A V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (SMD-1) Diode Forward Voltage"
4.0 100 -100 25 0.027 0.027 1.4
60 1.25
4.5 100 -100 50 0.04 0.04 1.4
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =30A VGS = 12V, ID =30A VGS = 0V, IS = 35A
1. Part numbers IRHN7054 (JANSR2N7394U) 2. Part number IRHN3054, IRHN4054 and IRHN8054 (JANSH2N7394U, JANSF2N7394U, JANSG2N7394U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion I Br LET Energy Range V DS(V) MeV/(mg/cm )) (MeV) (m) @VGS=0V@ GS=-5V@ GS=-10V@ GS=-15V @VGS=-20V =0V@V =-5V@V =-10V@V @VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V 59.9 345 32.8 60 60 45 40 30 36.8 305 39 40 35 30 25 20
80 60 VDS 40 20 0 0 -5 -10 VGS -15 -20
BR I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHN7054
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 25 C
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 50A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 150 C
1.5
100
1.0
0.5
10
V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHN7054
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 35A VDS = 48V VDS = 30V
C, Capacitance (pF)
6000
16
Ciss
4000
12
Coss
2000
8
Crss
0
4
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
TJ = 25 C TJ = 150 C
100
100
100us
1ms
10
10
10ms
1 0.4
V GS = 0 V
1.0 1.6 2.2 2.8 3.4 4.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHN7054
Pre-Irradiation
50
VDS
RD
LIMITED BY PACKAGE
40
VGS RG
D.U.T.
+
I D , Drain Current (A)
-VDD
30
VGS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN7054
EAS , Single Pulse Avalanche Energy (mJ)
1200
TOP BOTTOM
15V
1000
ID 16A 22A 35A
VDS
L
DRIVER
800
600
RG
D.U.T
IAS tp
+ - VDD
A
V/5 20V
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0
25
50
75
100
125
150
V(BR)DSS tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHN7054
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 150A/s, VDD 60V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 07/01
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