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| Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) 3.5V G @VGE = 15V, IC = 9.0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-247AC Max. 1200 15 9.0 30 30 6.0 30 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.24 -- 6 (0.21) Max. 1.2 2.5 -- 40 -- Units C/W g (oz) Revision 2 C-477 IRGPH30MD2 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A -- -- -- V/C VGE = 0V, IC = 1.0mA -- 3.1 3.5 IC = 9.0A V GE = 15V -- 4.9 -- V IC = 15A -- 3.6 -- IC = 9.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 2.5 -- -- S VCE = 100V, I C = 9.0A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 2500 VGE = 0V, V CE = 1200V, T J = 150C -- 2.7 3.0 V IC = 6.0A -- 2.4 2.7 IC = 6.0A, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. Typ. Max. Units Conditions -- 25 30 IC = 9.0A -- -- 6.0 nC VCC = 960V -- -- 15 -- 2.3 -- TJ = 25C -- 10 -- ns IC = 9.0A, V CC = 960V -- 200 450 VGE = 15V, R G = 23 -- 210 390 Energy losses include "tail" and -- -- -- diode reverse recovery. -- -- -- mJ -- 4.0 7.0 10 -- -- s VCC = 720V, T J = 125C VGE = 15V, R G = 23, VCPK < 1000V -- 33 -- TJ = 150C, -- 20 -- ns IC = 9.0A, V CC = 960V -- 480 -- VGE = 15V, R G = 23 -- 450 -- Energy losses include "tail" and -- 8.0 -- mJ diode reverse recovery. -- 13 -- nH Measured 5mm from package -- 670 -- VGE = 0V -- 50 -- pF VCC = 30V -- 10 -- = 1.0MHz -- 53 80 ns TJ = 25C -- 87 130 TJ = 125C I F = 6.0A -- 4.4 8.0 A TJ = 25C -- 5.0 9.0 TJ = 125C V R = 200V -- 116 320 nC TJ = 25C -- 233 585 TJ = 125C di/dt = 200A/s -- 180 -- A/s TJ = 25C -- 100 -- TJ = 125C VCC=80%(V CES), VGE=20V, L=10H, R G= 23 Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC C-478 |
Price & Availability of 2006
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