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PD -91418B
IRGMH40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCES = 1200V
G E
VCE(on) max = 3.6V
@VGE = 15V, IC = 13A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
TO-254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
Max.
1200 13 48 24 48 20 96 36 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.21 -- 1.3 -- 48
C/W
Test Conditions
For footnotes refer to the last page
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IRGMH40F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 --- Emitter-to-Collector Breakdown Voltage 17 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 1.1 --- 2.4 VCE(ON) Collector-to-Emitter Saturation Voltage --- 3.1 --- 2.6 VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -11 gfe Forward Transconductance T 5.0 --- --- --- ICES Zero Gate Voltage Collector Current --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 250 A --- V VGE = 0V, IC = 1.0 A --- V/C VGE = 0V, IC = 1.0 mA VGE = 15V 3.6 IC = 13A --- IC = 24A See Fig.2, 5 V --- IC = 13A , TJ = 125C 5.5 VCE = VGE, IC = 250 A --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = 13A 100 VGE = 0V, VCE = 960V A 1200 VGE = 0V, VCE = 960V, TJ = 125C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 84 IC = 13A 18 nC VCC = 400V See Fig. 8 30 VGE = 15V --- IC = 13A, VCC = 960V --- Energy losses include "tail" ns --- See Fig. 9, 10, 14 --- --- mJ --- 4.7 --- TJ = 125C --- IC = 13A, VCC = 960V ns --- VGE = 15V, RG = 10 --- Energy losses include "tail" --- mJ See Fig. 11, 14 --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- 1400 --- VGE = 0V --- 82 --- pF VCC = 30V See Fig. 7 --- 17 --- = 1.0MHz Typ. 56 12 20 25 14 270 270 0.5 2.6 3.1 25 14 450 650 7.5 6.8
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
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IRGMH40F
30
F or b o th :
T ria n g u la r w av e :
25
Load C urre nt (A)
D u ty c y c le : 5 0 % TJ = 1 2 5 C T s in k = 9 0 C G a te d ri ve a s s p e c ifi e d P o w e r D is s ip a tio n = 2 3 W
20 S q u a re w a v e : 15 6 0 % o f ra ted v o lta g e
C la m p vo lta g e: 8 0 % o f ra te d
10
5
Id e a l d io d e s
0 0.1 1 10
A
100
f, Fre q u e n cy (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
1000
TOP
I C , C o llector-to-Em itter Cu rrent (A)
I C , C ollec to r-to -E m itte r C u rren t (A )
VGS 20V 15V 10V 7.0V BOTTOM 6.0V
VGS 20V 15V 10V 7.0V BOTTOM 6.0V TOP
100
100
10
10
6 .0 V
1
1
6 .0 V 20 s P U LS E W ID TH TC = 2 5C
1 10
0.1
A
100
0.1 1 10
20 s P U LS E W ID TH TC = 1 50 C
A
100
VCE , C ollector-to-Em itter Vo ltag e (V)
VCE , C ollector-to-Em itter Vo ltag e (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGMH40F
24 4.0
V CE , C olle ctor-to-E m itter V olta ge (V )
M axim um D C C ollector C u rren t (A )
V G E = 1 5V
VGE = 15V 8 0 s P UL S E W ID TH IC = 2 6 A
20
3.5
16
3.0
12
2.5
I C = 13 A
8
2.0
I C = 6 .5 A
1.5
4
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , C ase Tem p era tu re (C )
T C , C ase Tem pe ra tu re (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
10
T herm al R es pon se (Z thJ C )
1 D = 0.5 0
0.20 0.10 0.1 0 .05 0 .02 0 .01 SING L E P U LS E (T H ER M A L R E SP O NS E) 0.01 0.00001 0.0001 0.001 0.01
PD M
t
1 t2
N o te s: 1 . D u ty fa c to r D = t
1
/t
2
2 . P e a k TJ = P D M x Z th J C + T C
A
1
0.1
t 1 , Re ctan gular Pulse D u ration (se c)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGMH40F
2500 20
2000
V G E , G ate-to-E m itter Vo ltag e (V)
A
V GE = C ie s = C re s = C oes =
0V , f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C gc
VCE = 400V I C = 13A
16
C , C apa cita nce (pF )
C ie s
1500
12
1000
C oes
8
500
4
C re s
0 1 10
0 0 10 20 30 40 50
A
60
100
V C E , C o llec to r-to -E m itte r V olta ge (V )
Q g , To ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.4
100
T otal Sw itc hing Los se s (m J )
To ta l S w itchin g Los ses (m J)
VCC VGE TC IC
= 960V = 15V = 2 5 C = 13A
R G = 10 V G E = 1 5V V C C = 9 60 V I C = 26 A
3.3
10
IC = 1 3 A I C = 6 .5 A
3.2
1
3.1
3.0 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80 100 120 140
A
160
R G , G a te R e sis ta n c e ()
TC , Ca se Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRGMH40F
20
16
I C , C o lle cto r-to -E m itte r C u rre n t (A )
T otal S w itch in g Los ses (m J )
RG TC V CC V GE
= 1 0 125C = 1 5 0 C = 9 6 0V = 15V
100
VGE = 2 0 V T J = 1 2 5 C
12
S A F E O P E R A TIN G A R E A
10
8
4
0 6 10 14 18 22 26 30
A
1 1 10 100 1000
A
10000
I C , C olle ctor-to-Em itte r C urren t (A )
VC E , C o lle c to r-to -E m itte r V o ltag e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRGMH40F
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 960V 960V 4 X IC@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 960V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
Q
R
9 0%
S
1 0% 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
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IRGMH40F
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
2X
NOTE S : 1. 2. 3. 4. DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHE S ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUTLINE T O-254AA. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
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