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| SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 JANUARY 1996 7 FEATURES * High breakdown voltage APPLICATIONS * Suitable for video output stages in TV sets and switch mode power supplies COMPLIMENTARY TYPE PARTMARKING DETAIL FZTA42 DEVICE TYPE IN FULL FZTA92 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 25 40 25 50 6 MHz pF SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -100 -500 2 -55 to +150 UNIT V V V A A UNIT V V V mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). CONDITIONS. IC=-100A, IE=0 IC=-1mA, IB=0* IE=-100A, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 305 |
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