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 FDH44N50
August 2002
FDH44N50
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as * PFC Boost * Two-Switch Forward Converter * Single Switch Forward Converter * Flyback Converter * Buck Converter * High Speed Switching
Features
* Low Gate Charge Requirement Qg results in Simple Drive
* Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness * Reduced rDS(ON) * Reduced Miller Capacitance and Low Input Capacitance * Improved Switching Speed with Low EMI * 175C Rated Junction Temperature
Package
JEDEC TO-247 SOURCE DRAIN GATE DRAIN (FLANGE)
Symbol
D
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed1 PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw 44 32 176 750 5 -55 to 175 300 (1.6mm from case) 10ibf*in (1.1N*m) A A A W W/oC
oC oC
Ratings 500 30
Units V V
Thermal Characteristics
RJC RCS RJA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient 0.2 0.24 40
o o
C/W C/W
oC/W
(c)2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
FDH44N50
Package Marking and Ordering Information
Device Marking FDH44N50 Device FDH44N50 Package TO-247 Reel Size Tape Width Quantity 30
Electrical Characteristics TJ = 25C (unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
Statics
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V Reference to 25oC, ID = 1mA VGS = 10V, ID = 22A VDS = VGS, ID = 250A VDS = 500V VGS = 0V VGS = 20V TC = 25oC TC = 150oC 500 2 0.61 0.11 3.15 0.12 4 25 250 100 V V/C V A nA BVDSS/TJ Breakdown Voltage Temp. Coefficient rDS(ON) VGS(th) IDSS IGSS Drain to Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current
Dynamics
gfs Qg(TOT) Qgs Qgd td(ON) tr td(OFF) tf CISS COSS CRSS Forward Transconductance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 50V, ID = 22A VGS = 10V, VDS = 400V, ID = 44A VDD = 250V, ID = 44A, RG = 2.15, RD = 5.68 VDS = 25V, VGS = 0V, f = 1MHz 11 90 24 31 16 84 45 79 5335 645 40 108 29 37 S nC nC nC ns ns ns ns pF pF pF
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy2 Avalanche Current 1500 44 mJ A
Drain-Source Diode Characteristics
IS ISM VSD trr QRR
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature 2: Starting TJ = 25C, L = 1.61mH, IAS = 44
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
1
MOSFET symbol showing the integral reverse G p-n junction diode. ISD = 44A
D
-
0.900 920 14
44 176 1.2 1100 18
A A V ns C
S
Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge
ISD = 44A, dISD/dt = 100A/s ISD = 44A, dISD/dt = 100A/s
(c)2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
FDH44N50
Typical Characteristic
500
ID, DRAIN TO SOURCE CURRENT (A)
ID, DRAIN TO SOURCE CURRENT (A)
TJ = 25oC VGS DESCENDING 10V 8V 6V 5.5V 5V 4.5V
200 100
TJ = 175oC VGS DESCENDING
100
10V 6.5V 6V 5.5V 5V 4.5V 4V 10
10
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1 1 10 100
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
160 PULSE DURATION = 80s 140 DUTY CYCLE = 0.5% MAX VDD = 80V NORMALIZED DRAIN to SOURCE ON RESISTANCE 3
Figure 2. Output Characteristics
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
120 100 80 60 40 20 0 3.0 TJ = 175oC TJ = 25oC
2
1
VGS = 10V, ID = 22A 0 -50 -25 0 25 50 75 100 125 150 175
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On Resistance vs Junction Temperatrue
16 ID = 44A 100V 250V 12 400V 8
CISS
1000 COSS
100
VGS, GATE to SOURCE VOLTAGE (V)
10000
C, CAPACITANCE (pF)
4
CRSS VGS = 0V, f = 1MHz 10 1 10 100
0
0
25
50
75
100
125
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant Gate Current
(c)2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
FDH44N50
Typical Characteristic (Continued)
ISD , SOURCE TO DRAIN CURRENT (A)
80 70 60 50 40 30 20 10 TC = 25oC 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 1 10 100 TJ = 175oC TJ = 25oC 200 100
ID, DRAIN CURRENT (A)
100s
10
OPERATION IN THIS AREA LIMITED BY RDS(ON) 1ms
10ms
DC 1000
VSD , SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body Diode Current
50
Figure 8. Maximum Safe Operating Area
ID, DRAIN CURRENT (A)
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (C)
Figure 9. Maximum Drain Current vs Case Temperature
ZJC, NORMALIZED THERMAL RESPONSE
DUTY CYCLE DESENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
1
0.1 PD
t1
t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 100
SINGLE PULSE 0.01 10-5
t1, RECTANGULAR PULSE DURATION (S)
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
(c)2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
FDH44N50
Test Circuits and Waveforms
VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG -
BVDSS
VDS VDD
+
VDD
IAS 0.01
0 tAV
Figure 11. Unclamped Energy Test Circuit
Figure 12. Unclamped Energy Waveforms
VDS RL
VDD
Qg(TOT) VDS VGS = 10V
VGS
+
VDD DUT Ig(REF) 0
VGS VGS = 1V Qg(TH) Qgs Ig(REF) 0 Qgd
Figure 13. Gate Charge Test Circuit
Figure 14. Gate Charge Waveforms
VDS
tON td(ON) RL VDS 90% tr
tOFF td(OFF) tf 90%
VGS
+
VDD DUT 0
10%
10%
90% VGS 50% PULSE WIDTH 50%
RGS
VGS
0
10%
Figure 15. Switching Time Test Circuit
Figure 16. Switching Time Waveform
(c)2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1


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