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| BUZ 349 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 349 VDS 100 V ID 32 A RDS(on) 0.06 Package TO-218 AA Ordering Code C67078-S3113-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 32 Unit A ID IDpuls 128 TC = 27 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 32 15 mJ ID = 32 A, VDD = 25 V, RGS = 25 L = 322 H, Tj = 25 C Gate source voltage Power dissipation 220 VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 349 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.05 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.06 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 21 A Semiconductor Group 2 07/96 BUZ 349 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 17 1400 450 230 - S pF 1850 700 370 ns 20 30 VDS 2 * ID * RDS(on)max, ID = 21 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 80 120 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 230 300 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 120 160 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 349 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.4 130 0.7 32 128 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 64 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 349 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 34 A 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 ID 28 24 20 16 12 8 4 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A 10 0 t = 25.0s p ID 10 2 ZthJC 10 -1 / I D = V DS 100 s DS (o n) 10 -2 D = 0.50 1 ms R 10 1 0.20 10 10 ms -3 0.10 0.05 10 -4 single pulse 0.02 0.01 10 0 0 10 10 1 DC 2 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 349 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 75 A 65 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.19 Ptot = 125W l kj i h VGS [V] a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.16 RDS (on) 0.14 0.12 0.10 0.08 0.06 0.04 b a b c d e f g ID 60 55 g c d 50 45 40 35 30 d e f e f g h i j k h i j k 25 20 15 10 5 0 0 a c l 0.02 0.00 0 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 1 2 3 4 5 6 7 V 9 10 20 30 40 50 A 70 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 75 A 65 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 22 S ID 60 55 50 45 40 35 30 gfs 18 16 14 12 10 8 25 20 15 10 5 0 0 2 0 1 2 3 4 5 6 7 8 V 10 0 10 20 30 40 50 A ID 70 6 4 VGS Semiconductor Group 6 07/96 BUZ 349 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 21 A, VGS = 10 V 0.19 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.16 RDS (on) 0.14 98% VGS(th) 3.6 3.2 typ 0.12 0.10 0.08 0.06 2.8 2.4 2% 98% typ 2.0 1.6 1.2 0.04 0.02 0.00 -60 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 nF C 10 0 A IF Ciss 10 2 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 349 Avalanche energy EAS = (Tj ) parameter: ID = 32 A, VDD = 25 V RGS = 25 , L = 322 H 240 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 51 A 16 V 200 EAS 180 160 VGS 12 0,2 VDS max 0,8 VDS max 10 140 120 100 6 80 60 40 2 20 0 20 0 40 60 80 100 120 C 160 0 10 20 4 8 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 349 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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