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| BU941/BU941P BU941PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 1 2 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BU941 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature 180 -65 to 200 200 Value BU941P 500 400 5 15 30 1 5 155 -65 to 175 175 65 -65 to 175 175 BUB941PFI V V V A A A A W o o Uni t C C 1/8 September 1997 BU941/BU941P/BUB941PFI THERMAL DATA TO-3 R t hj-ca se Thermal Resistance Junction-case Max 0.97 TO-218 0.97 ISOW ATT 218 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 500 V V CE = 500 V V CE = 450 V V CE = 450 V V EB = 5 V I C = 100 mA L = 10 mH I B = 0 V CLAMP = RAT ED V CEO (See FIG.4) IC = 8 A I C = 10 A I C = 12 A IC = 8 A I C = 10 A I C = 12 A IC = 5 A I F = 10 A V CC = 24 V V cla mp = 400 V L= 7 mH V CC = 12 V V cla mp = 300 V L= 7 mH I C = 7 A I B = 70 mA R BE = 47 V BE = 0 10 IB = 100 mA I B = 250 mA I B = 300 mA IB = 100 mA I B = 250 mA I B = 300 mA VCE = 10 V 300 2.5 V A 400 1.6 1.8 2 2.2 2.5 2.7 Tj = 125 C Tj = 125 C o o Min. Typ . Max. 100 0.5 100 0.5 20 Un it A mA A mA mA V V V V V V V V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Diode Forward Voltage Functional Test (see fig. 1) * ts tf INDUCTIVE LOAD Storage Time Fall T ime (see fig. 3) V BE(s at) h FE VF 15 0.5 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8 BU941/BU941P/BUB941PFI DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Switching Time Inductive Load (see fig.3) 3/8 BU941/BU941P/BUB941PFI FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit 4/8 BU941/BU941P/BUB941PFI TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F E 5/8 BU941/BU941P/BUB941PFI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 1 2 3 P025A 6/8 G BU941/BU941P/BUB941PFI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 7/8 BU941/BU941P/BUB941PFI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 8/8 |
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