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Preliminary
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=300mA * Rg=500W
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 800 -2.4 10 6 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=2.0mA VDS=3V,ID=300mA VDS=10V,ID=300mA,f=1.9GHz Pin=12dBm VDS=10V,ID=300mA,f=1.9GHz DVf Method -1.0 28 17 -
Limits
Typ. 600 260 30 37 19 1.2 17 Max. 800 -5.0 25
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin 35 70
30
Vds=10V Id(off)=300mA f=1.9GHz
60
25
Po
50 Gp(dBm)PAE(%)
Po(dBm)
20
PAE
40
15
Gp
30
10
20
5
10
0 -10 -5 0 5 10 15 Pin(dBm)
0
Pi(SCL) vs.Po(SCL),IM3 40 35 30 25 20 15 10 5 0 -5 -10 -15 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 5 10 15 20
Po(SCL)(dBm)
IM3
-10
-5
0
Pin(SCL)(dBm)
Mitsubishi Electric
IM3(dBc)
VD=10V ID=300mA f1=1.90GHz f2=1.91Ghz
Po
July 1999
MGF0919A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Mag 0.925 0.916 0.908 0.900 0.895 0.889 0.886 0.882 0.878 0.876 0.873 0.870 0.868 0.865 0.863 0.861 0.858 0.856 0.854 0.852 0.849 0.847 0.844 0.842 0.840 0.837 0.835 0.833 0.830 0.827 0.824 0.821 0.817 0.814 Ang(deg) -66.77 -80.77 -94.49 -105.20 -113.94 -121.43 -127.89 -133.63 -138.86 -143.59 -148.01 -152.04 -155.78 -159.41 -162.77 -165.95 -169.03 -171.93 -174.83 -177.57 179.79 177.22 174.73 172.22 169.90 167.57 165.20 162.91 159.75 157.08 154.49 151.85 149.17 146.45
(Ta=25C,VD=10V,ID=300mA, Reference Plane see Fig.1)
S21 Mag 7.248 6.558 5.876 5.349 4.921 4.562 4.253 3.982 3.743 3.527 3.332 3.155 2.991 2.840 2.700 2.568 2.446 2.329 2.220 2.117 2.019 1.925 1.836 1.751 1.668 1.589 1.514 1.440 1.372 1.305 1.239 1.172 1.105 1.038 Ang(deg) 147.86 132.14 116.56 104.33 94.25 85.60 78.06 71.35 65.24 59.74 54.55 49.77 45.38 41.10 37.12 33.34 29.76 26.36 22.98 19.89 16.79 13.79 10.89 8.18 5.47 2.74 0.22 -2.31 -4.88 -7.24 -9.61 -11.99 -14.39 -16.80 Mag 0.030 0.031 0.031 0.032 0.032 0.033 0.033 0.034 0.033 0.033 0.034 0.034 0.034 0.035 0.035 0.035 0.035 0.035 0.036 0.036 0.036 0.036 0.036 0.037 0.037 0.038 0.038 0.038 0.038 0.038 0.038 0.039 0.039 0.039 S12 Ang(deg) 72.76 63.14 53.66 46.23 39.95 34.60 29.86 25.65 21.74 18.24 14.95 11.87 8.98 6.20 3.62 1.14 -1.24 -3.54 -5.82 -7.91 -10.01 -12.01 -14.01 -15.92 -17.83 -19.66 -21.48 -23.31 -25.08 -26.84 -28.51 -30.19 -31.89 -33.60 Mag 0.211 0.269 0.326 0.370 0.406 0.438 0.465 0.489 0.511 0.530 0.549 0.566 0.581 0.595 0.609 0.622 0.634 0.645 0.656 0.666 0.675 0.685 0.693 0.702 0.710 0.717 0.724 0.731 0.737 0.744 0.750 0.756 0.762 0.767 S22 Ang(deg) -123.68 -126.76 -129.77 -132.25 -134.32 -136.20 -137.89 -139.49 -141.00 -142.41 -143.73 -145.06 -146.30 -147.53 -148.68 -149.83 -150.98 -152.04 -153.17 -154.23 -155.28 -156.25 -157.30 -158.26 -159.31 -160.25 -161.20 -162.15 -163.10 -163.96 -164.90 -165.84 -166.79 -167.73 K 0.30 0.29 0.28 0.27 0.27 0.27 0.28 0.27 0.29 0.31 0.31 0.33 0.35 0.35 0.37 0.40 0.42 0.46 0.46 0.49 0.53 0.56 0.60 0.63 0.67 0.69 0.74 0.79 0.84 0.89 0.95 1.02 1.10 1.19 MSG/MAG (dB) 23.87 23.32 22.73 22.21 21.87 21.43 21.14 20.74 20.48 20.23 19.87 19.64 19.41 19.07 18.85 18.63 18.42 18.20 17.87 17.66 17.45 17.23 17.02 16.80 16.58 16.25 16.02 15.80 15.56 15.33 15.08 13.94 12.63 11.63
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 OU T LINE DR A W ING
Mitsubishi Electric July 1999
2.8

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