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STE70IE120
Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Power Module
General features
VCS(ON) 1V
IC 70A
RCS(ON) 0.014W ISOTOP
High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz Ultra low CISS Low dynamic VCS(ON)

Description
The STE70DE120 is manufactured in monolithic structure, to be used in industrial applications.
Applications

Solar Welding
Order codes
Part number STE70IE120 Marking E70IE120 Package ISOTOP Packaging Tube
May 2007
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
(R)
Target data
Internal schematic diagram
Rev 1
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Electrical ratings
STE70IE120
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Electrical ratings
Table 1. Absolute maximum ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot TSTG TJ VISO Parameter Collector-source voltage (VBS = VGS = 0V) Base-source voltage (IC = 0, VGS = 0V) Source-base voltage (IC = 0, VGS = 0V) Gate-source voltage Collector current Collector peak current (tp < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at TC = 25C Storage temperature Maximum operating junction temperature Insulation withstand voltage (AC-RMS) from all four leads to external heatsink Value 1200 40 12 Unit V V V V A A A A W C C V
20
70 150 20 70 TBD -65 to 150 150 2500
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Thermal data
Table 2. Thermal data
Symbol RthJ-case Rthc-h Parameter Thermal resistance junction-case (Max) Thermal resistance case-heatsink with conductive grease applied (Max) Value TBD TBD Unit C/W C/W
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STE70IE120
Electrical characteristics
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Electrical characteristics
Table 3. Electrical characteristics (TCase = 25C, unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. 100 10 100 500 1 1 3 6 tbd tbd 3 3.7 tbd tbd 4.5 7 13 V V V pF nC Unit A A A nA V V ICS(SS) Collector-source current VCE = 1200V (V BS = VGS = 0) IBS(OS) ISB(OS) IGS(OS) Base-source current (IC = 0, VGS = 0V) Source-base current (IC = 0, VGS = 0) Gate-source leakage VBS(OS) = 40V VSB(OS) = 10V VGS = 20V VGS = 10V_IC = 70A IB = 14A VGS = 10V_IC = 45A IB = 4.5A VGS = 10V_VCS = 1V_IC = 70A VGS = 10V_VCS = 1V_IC = 45A VBS(ON) Base-emitter ON voltage VGS(th) Ciss Gate threshold voltage Input Capacitance VGS = 10V__IC = 70A _IB = 14A VGS = 10V__IC = 45A_IB = 4.5A VBS = VGS __ IB = 250A VCS = 25V __ f=1MHz VGS = VCB = 0 VCS = 25V ___VGS = 10 VCB = 0______IC = 70A
VCS(ON) Collector-source ON voltage hFE DC current gain
QGS(tot) Gate-source charge
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Package Mechanical data
STE70IE120
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Package Mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STE70IE120
Package Mechanical data
ISOTOP MECHANICAL DATA
DIM. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 14.9 12.6 3.5 4.1 4.6 4 4 30.1 mm MIN. 11.8 8.9 7.8 0.75 1.95 37.8 31.5 25.15 23.85 24.8 15.1 12.8 4.3 4.3 5 4.3 4.4 30.3 0.586 0.496 0.137 0.161 0.181 0.157 0.157 1.185 TYP. MAX. 12.2 9.1 8.2 0.85 2.05 38.2 31.7 25.5 24.15 MIN. 0.465 0.350 0.307 0.029 0.076 1.488 1.240 0.990 0.938 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950
P093A
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Revision history
STE70IE120
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Revision history
Table 4. Document revision history
Date 04-May-2007 Revision 1 Initial EDOCS release Changes
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STE70IE120
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