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MegaMOSTMFET Module
N-Channel Enhancement Mode
VMO 380-02 F VDSS
ID25 RDS(on)
1 11
= 200 V = 385 A = 4.6 m
Preliminary data
10 2 11 2 1 10
Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; R GS = 10 k Continuous Transient T K = 25C T K = 25C, t P = 10 s TC = 25C T K = 25C
Maximum Ratings 200 200 20 30 385 1540 2230 1505 -40 ...+150 150 -40 ... +125 V V V V A A W W C C C V~ V~ Features
q q
1 = Drain 10 = Kelvin Source
2 = Source 11 = Gate
50/60 Hz IISOL 1 mA
t = 1 min t=1s
3000 3600
q q q
Mounting torque (M6) Terminal connection torque (M5) typical including screws
2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 g
q
International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive
Applications Symbol Test Conditions Characteristic Values (T J = 25C, unless otherwise specified) min. typ. max. 200 3 6 500 TJ = 25C TJ = 125C V V
q q
q
VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 12 mA V DS = 20 V, ID = 120 mA VGS = 20 V DC, VDS = 0 V DS = VDSS , VGS = 0 V V DS = 0.8 * VDSS, VGS = 0 V
q
AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers in fork lift trucks
nA Advantages
q q q q
2,5 mA 12 mA 4.6 m
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
Easy to mount Space and weight savings High power density Low losses
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
VMO 380-02 F
Symbol Test Conditions (TJ ID=0.5*ID25 Characteristic Values unless otherwise specified) min. typ. m a x . TBD 48 VGS =0V, VDS=25V, f=1 MHz 8.8 3.1 210 VGS=10V, RG = 1 VDS=0.5*VDSS, (External) ID=0.5*ID25 500 900 350 2090 VGS=10V, VDS=0.5*VDSS, ID=0.5*ID25 385 1045 S nF nF nF ns ns ns ns nC nC nC 0.056 K / W with 30 m heat transfer paste 0.083 K / W
Dimensions in mm (1 mm = 0.0394")
=
25C,
g fs C iss Coss Crss t d(on) tr t d(off) tf Qg Qgs Q gd R thJC R thJK Source-Drain Symbol IS I SM VSD t rr
V D S =10V;
pulsed
Diode Test V GS =0 Repetitive; IF=I S; Pulse IF = pulse width limited (TJ Conditions = 25C,
Characteristic Values unless otherwise specified) min. typ. m a x . 385 by TJM 0.9 d2% 1540 1.2 A A V
VGS=0V, test, t300s, IS , -di/dt =
duty 1200
cycle A/
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
VMO 380-02 F
1200 ID
A
1200 ID
VGS = 10 V 9V 8V 7V
A
VDS = 30 V
1000 800 600
1000 800 600
6V
400 200
5V
400 200
T J = 125C TJ = 25C
0 0 1 2 3 4 VDS 5
V
0 6 0 2 4 VGS 6
V
8
Fig. 1 Typical output characteristics ID = f (VDS)
1.4 RDS(on) norm. 1.3 1.2
VGS = 10 V
Fig. 2 Typical transfer characteristics ID = f (VGS)
2.5 RDS(on) norm. 2.0
ID = 190 A
1.1
V GS = 15 V
1.5
1.0 1.0 0.9 0.8 0 200 400 600 800 1000 A ID 1200 0.5 -50
-25
0
25
50
75
100 TJ
125 C150
Fig. 3 Typical RDS(on) = f (ID), normalized
450 ID 400 A 350 300 250 0.9 200 150 100 0.7 50 0 0 25 50 75 100 TS 125 C 150 0.8 1.2 VDSS V GS(th) 1.1 norm. 1.0
Fig. 4 RDS(on) = f (TJ), normalized
VGS(th) VDSS
0.6 -50
-25
0
25
50
75
100 TJ
125 C150
Fig. 5 Continuous drain current ID = f (TK)
Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
VMO 380-02 F
15 V GS
V
12
VDS = 100 V ID = 190 A IG = 11 mA
10000 ID
A
Limited by RDS(on) t = 1 ms T S = 25C T J = 150C non-repetitive
1000 9
6 100 3
t = 100 ms t = 10 ms
0 0 500 1000 1500 2000 2500 nC 3000 Qg
10 1 10 100 VDS
V
1000
Fig. 7 Typical turn-on gate charge characteristics
1000 nF C 100
Ciss
Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS )
1200 A 1000 IS 800 600
Coss
T J = 125C
TJ = 25C
10
Crss
400 200
1 0 5 10 15 VDS 20 V 25
0 0.00 0
0.25
0.50
0.75
1.00
1.25 V 1.50 VSD
Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz
1000 Id 900 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 tp
s1
D= 0.2 D= 0.3 D= 0.4 D= 0.5 D= 0.7 D= 0.1
Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD )
0.1 K/W
D = 0.5
TK = 80C
ZthJK
D= 0.2
0.01
D= 0.1
D=0.05
D=0.02 D=0.01 D = single pulse
0.001 0.001
0.01
0.1
1 tp
s
10
Fig. 11 Drain current versus pulse width and duty cycle
Fig. 12 Transient thermal resistance ZthJK = f (tp)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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