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KSA1150 KSA1150 Low Frequency Power Amplifier * Collector Dissipation : PC = 300mW * Complement to KSC2710 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 -700 300 150 -55 ~ 150 Units V V V mA mA mW C C * PW350ms, Duty cycle50% Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC= -100A, IE=0 IC= -10mA, IB=0 IE= -100A, IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -100mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA 40 -0.3 -1.0 Min. -40 -20 -5 -100 -100 400 -0.4 -1.3 V V Typ. Max. Units V V V nA nA * Pulse Test: PW350s, Duty cycle2% hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Typical Characteristics -500 -450 1000 VCE =-1V IB = -1.6mA IB = -1.4mA IB = -1.2mA IB = -1.0mA IB = -0.8mA IB = -0.6mA IB = -0.4mA IB = -0.2mA 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT -400 -350 -300 -250 -200 -150 -100 -50 0 0 -2 -4 -6 hFE, DC CURRENT GAIN -18 -20 100 -8 -10 -12 -14 -16 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE -10 -1000 IC=10IB -1 VBE(sat) IC[mA], COLLECTOR CURRENT VCE =-1V -100 -0.1 -10 VCE(sat) -0.01 -1 -10 -100 -1000 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE (sat)[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 f=1MHz IE=0 Cob[pF], CAPACITANCE 10 1 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Package Dimensions TO-92S 4.00 0.20 2.31 0.20 0.66 MAX. (1.10) 0.49 0.10 1.27TYP [1.270.20] 3.72 0.20 1.27TYP [1.270.20] 14.47 0.30 3.70 0.20 0.35 -0.05 +0.10 2.86 0.20 0.77 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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