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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW76 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups. The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW76
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) Note 1. At 80 W P.E.P. PIN CONFIGURATION PINNING - SOT121B. PIN
handbook, halfpage 4
VCE V 28 28
IC(ZS) A 0,05 -
f MHz 1,6 - 28 108
PL W 8 - 80 (P.E.P.) 80
Gp dB > 13 typ. 7,9 >
% 35(1) typ. 70
d3 dB < -30 -
DESCRIPTION collector emitter base emitter
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW76
70 V 35 V 4V 8A 20 A 140 W 200 C
-65 to + 150 C
MGP499
handbook, halfpage
10
handbook, halfpage
200
MGP500
Prf (W) IC (A) Th = 70 C Tmb = 25 C 100 150
derate by 0.77 W/K
50 derate by 0.56 W/K
1 1 10 VCE (V)
102
0 0 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch 50 Th (C) 100
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 60 W; Tmb = 82 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 1,92 K/W 1,33 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) hFE hFE1/hFE2 voltage(1) VCEsat MHz(2) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. < IC = 4 A; VCE = 5 V D.C. current grain ratio of matched devices(1) IC = 4 A; VCE = 5 V Collector-emitter saturation IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 -IE = 4 A; VCB = 28 V -IE = 12,5 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. ICES < V(BR)EBO > V(BR) CEO > V(BR) CES >
BLW76
70 V 35 V 4V 10 mA 15 to 80 1,2 2,5 V 315 MHz 305 MHz 125 pF 85 pF 3 pF
handbook, halfpage
10
MGP501
IC (A) 1 Th = 70 C 25 C
10-1
Fig.4 Typical values; VCE = 20 V.
10-2 0.5
1
1.5
VBE (V)
2
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
60
MGP502
handbook, halfpage
600
MGP503
hFE
VCE = 28 V
Cc (pF) 400
40 5V
20
200 typ
0 0 10 IC (A) 20
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
600
MGP504
fT (MHz)
400 typ
200
0 0 5 10 15 -IE (A) 20
Fig.7 VCB = 28 V; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 8 to 80 (P.E.P.) Gp dB > 13 dt (%) > 35 IC (A) < 4,1 d3 dB < -30 d5 dB < -30
BLW76
IC(ZS) A 0,05
at 80 W P.E.P.
handbook, full pagewidth
C1 L5 C2 C13 50 L1 R3 T.U.T. R6 C3 C5 C8 C7 C9 C10 R7 L2 L3 C11 C12 C15 C16 C14
50
R1
R4
L4 +VCC
BD228 C6 BD443
C4
R2
R5
MGP505
Fig.8 Test circuit; s.s.b. class-AB.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components: C1 C2 C3 C4 C5 C7 C10 C11 C12 C13 C14 C16 L1 L2 L3 L5 R1 R2 R3 R4 R5 R6 R7 = = = = = = = = = = = = = = = = = = = = = = = 27 pF ceramic capacitor (500 V) 100 pF air dielectric trimmer (single insulated rotor type) 100 pF polystyrene capacitor C6 = C9 = 100 nF polyester capacitor 280 pF air dielectric trimmer (single non-insulated rotor type) C8 = 3,9 nF ceramic capacitor 2,2 F moulded metallized polyester capacitor 180 pF polystyrene capacitor 2 x 68 pF ceramic capacitors in parallel (500 V) 120 pF polystyrene capacitor C15 = 280 pF air dielectric trimmer (single insulated rotor type) 56 pF ceramic capacitor (500 V) 108 nH; 4 turns Cu wire (1,6 mm); int. dia. 8,7 mm; length 11,2 mm; leads 2 x 7 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 88 nH; 3 turns Cu wire (1,6 mm); int. dia. 8,0 mm; length 8,0 mm; leads 2 x 7 mm 120 nH; 4 turns Cu wire (1,6 mm); int. dia. 9,3 mm; length 11,2 mm; leads 2 x 7 mm 1,5 k ( 5%) carbon resistor (0,5 W) 10 wirewound potentiometer (3 W) 0,9 ; parallel connection of 2 x 1,8 carbon resistors ( 5%; 0,5 W each) 60 ; parallel connection of 2 x 120 wirewound resistors (5,5 W each) 56 ( 5%) carbon resistor (0,5 W) 33 ( 5%) carbon resistor (0,5 W) 4,7 ( 5%) carbon resistor (0,5 W)
BLW76
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
-20
MGP506
d3, d5 (dB) -30
handbook, halfpage
60
MGP507
30 Gp (dB) 20
dt (%) 40 d3 Gp dt 20
-40
d5
10
-50
0
50
P.E.P. (W)
100 0 0 50 P.E.P. (W) 0 100
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
Fig.9
Intermodulation distortion as a function of output power.(1.)
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
Fig.10 Double-tone efficiency and power gain as a function of output power.
handbook, halfpage
MGP508
10
MGP509
2.5 xi () 0
ri () 7.5 xi 5
handbook, halfpage
40
Gp (dB) 30
-2.5
20 2.5 ri 10 0 1 0 1 10 f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th 25 C; ZL = 3,9 . 10 f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th 25 C; ZL = 3,9 . -7.5 102 -5
102
Fig.12 Input impedance (series components) as a function of frequency.
Fig.11 Power gain as a function of frequency. Figs 11 and 12 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. August 1986 8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
40
MGP510
handbook, halfpage
20
MGP511
2.5 xi () 0
Gp (dB) 30
ri () 15
xi 20 10 -2.5
10
5 ri
-5
0 1 10 f (MHz)
102
0 1 10 f (MHz)
-7.5 102
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 C; ZL = 3,9 ; neutralizing capacitor: 68 pF.
VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th = 25 C; ZL = 3,9 ; neutralizing capacitor: 68 pF.
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a function of frequency.
Figs 13 and 14 are typical curves and hold for a push-pull amplifier with cross-neutralization in s.s.b. class-AB operation.
handbook, halfpage
150
MGP512
PLnom (W P.E.P.) (VSWR = 1) Th 50 C 100 70 C
90 C
50 1 10 VSWR The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
102
Fig.15 R.F. SOAR; s.s.b. class-AB operation; f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 108 VCE (V) 28 PL (W) 80 PS (W) typ. 13 Gp (dB) typ. 7,9 IC (A) typ. 4,1 (%) typ. 70 zi () 0,85 + j1,0
BLW76
YL (mS) 174 - j40
handbook, full pagewidth
C1 50 C2
L1 C3
,, ,, ,,
L5 L2 T.U.T. C4ab L4 C5 L3 R1
C8 L8 C9 50 C7ab C10 C11
L6
C6
R2
L7
+VCC
MGP513
Fig.16 Test circuit; c.w. class-B.
List of components: C1 C2 C3 C4ab C5 C6 C7a C7b C8 C11 L1 L2 L3 L4 L6 L8 R1 = C9 = C10 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) = 22 pF ceramic capacitor (500 V) = 2 x 82 pF ceramic capacitors in parallel (500 V) = 270 pF polystyrene capacitor = 100 nF polyester capacitor = 8,2 pF ceramic capacitor (500 V) = 10 pF ceramic capacitor (500 V) = 5,6 pF ceramic capacitor (500 V) = 10 pF ceramic capacitor (500 V) = 21 nH; 2 turns Cu wire (1,0 mm); int. dia. 4,0 mm; length 3,5 mm; leads 2 x 5 mm = L5 = 2,4 nH; strip (12 mm x 6 mm); tap for L4 at 6 mm from transistor = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm = 49 nH; 2 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 4,7 mm; leads 2 x 5 mm = 56 nH; 2 turns Cu wire (1,6 mm); int. dia. 10,0 mm; length 4,5 mm; leads 2 x 5 mm = R2 = 10 ( 10%) carbon resistor
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
Component layout and printed-circuit board for 108 MHz test circuit are shown in Fig.17.
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
166
handbook, full pagewidth
70
L7 L3 C6 C5 L6 C7a C8 L1 C4b rivet strip L2 L5 L8 C7b
+VCC
C3 C1 C2
R1 C4a
R2
L4
C9 C10
C11
MGP514
Fig.17 Component layout and printed-circuit board for 108 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
150
MGP515
handbook, halfpage
10
MGP516
100 (%)
PL (W) typ 100
Gp (dB)
Gp
5
50
50
0 0 20 PS (W) 40
0 0 50 100 PL (W)
0 150
Fig.18 VCE = 28 V; f = 108 MHz; Th = 25 C.
Fig.19 VCE = 28 V; f = 108 MHz; Th = 25 C; typical values.
handbook, halfpage
150
MGP517
PLnom (W) (VSWR = 1)
100
Th =
50 C 70 C 90 C 50 1 10 VSWR 102
The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
Fig.20 R.F. SOAR; c.w. class-B operation; f = 108 MHz; VCE = 28 V; Rth mb-h = 0,2 K/W.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
2
MGP518
7.5 RL () 5 RL
MGP519
0.75 CL (nF) 0.5
ri, xi () ri
2.5
0.25
0 xi
0
CL
0
-2.5 -5 -7.5 0 100 f (MHz) 200
-0.25 -0.5 -0.75 200
-2
0
100
f (MHz)
Fig.21 VCE = 28 V; PL = 80 W; Th = 25 C; typical values.
Fig.22 VCE = 28 V; PL = 80 W; Th = 25 C; typical values.
handbook, halfpage
30
MGP520
Gp (dB) 20
typ 10
0 0 100 f (MHz) 200
Fig.23 VCE = 28 V; PL = 80 W; Th = 25 C.
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW76
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
14
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW76
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
15

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