View MII300-12A4_898123.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII
3
IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2.2 V
MID
3
MDI
3
1
2
3 11 10 9 8
8 9
1
1
8 9
1
11 10
2
11 10
2
2
E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 3.3 W, non repetitive VGE = 15 V, TJ = 125C, RG = 3.3 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 330 220 440 10 ICM = 400 VCEK < VCES 1380 150 -40 ... +150 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 V V V V A A A ms A Advantages W
q
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873
q q q q q q q q q q q q
C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz.
q
space and weight savings reduced protection circuits
Typical Applications
q q
Md
q q
AC and DC motor control AC servo and robot drives power supplies welding inverters
Data according to a single IGBT/FRED unless otherwise stated.
(c) 2000 IXYS All rights reserved
1-4
030
MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
Symbol
Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 20 6.5 V V
Dimensions in mm (1 mm = 0.0394")
V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS
VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 200 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz
13 mA mA 800 nA
2.2 13 2 1 100 60 600 90 32 29 0.18
2.7
V nF nF nF ns ns ns ns mJ mJ
Inductive load, TJ = 125C IC = 200 A, VGE = 15 V VCE = 600 V, RG = 3.3 W
with heatsink compound
0.09 K/W K/W Equivalent Circuits for Simulation
Reverse Diode (FRED)
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.2 1.7 2.5 2.3 450 280 180 200 0.3 V V A A A ns 0.15 K/W K/W
Conduction
VF IF IRM trr RthJC RthJS
IF = 200 A, VGE = 0 V, IF = 200 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 200 A, VGE = 0 V, -diF/dt = 1800 A/ms TJ = 125C, VR = 600 V with heatsink compound
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.3 V; R0 = 6.2 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 2.4 mW Thermal Response
IGBT (typ.) Cth1 = 0.50 J/K; Rth1 = 0.088 K/W Cth2 = 1.16 J/K; Rth2 = 0.002 K/W Free Wheeling Diode (typ.) Cth1 = 0.44 J/K; Rth1 = 0.146 K/W Cth2 = 0.80 J/K; Rth2 = 0.003 K/W
(c) 2000 IXYS All rights reserved
2-4
MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
500
A
500
TJ = 25C VGE=17V 15V 13V
400
IC
A 400 IC 300 200
TJ = 125C
VGE=17V 15V 13V 11V
300 200 100 0 0.0
11V
9V 9V
100 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
500 VCE = 20V A 400
IC
TJ = 25C
900 A 800 700 IF 600 500 400 300
TJ = 125C TJ = 25C
300 200 100 0 5 6 7 8 9 10
VGE
200 100 0
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
20 V
VGE
120
VCE = 600V IC = 200A
300
ns
trr
A IRM
15
trr
80 10 40 5
IRM TJ = 125C VR = 600V IF = 200A
200
100
300-12
0 0 200 400 600 800 1000 nC
QG
0 0 200 400 600
A/ms 800 -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2000 IXYS All rights reserved
3-4
MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
80
mJ Eon Eon
160 ns 120 td(on) t 80 tr
VCE = 600V VGE = 15V
80
mJ td(off) Eoff 60
800 ns 600 t Eoff
VCE = 600V VGE = 15V
60
40
40
400
20
RG = 3.3W TJ = 125C
40
20
RG = 3.3W TJ = 125C
200
tf
0 0 100 200 300
IC
0 400 A 500
0
0 100 200 300 IC 400
0 A 500
Fig. 7 Typ. turn on energy and switching times versus collector current
100
mJ Eon 400 ns 320 td(on) tr t 240 160 80 0 28 Eoff
Fig. 8 Typ. turn off energy and switching times versus collector current
50
mJ 2000
VCE = 600V VGE = 15V IC = 200A TJ = 125C
80
Eon
VCE = 600V VGE = 15V IC = 200A TJ = 125C
ns Eoff td(off) 1600 t 1200 800 400 tf 0
40 30 20 10 0 0
60 40 20 0 0 4 8 12 16
RG
20
24
W
4
8
12
16
RG
20
24
W 28
Fig. 9 Typ. turn on energy and switching times versus gate resistor
500
A 1 K/W 0.1 ZthJC 0.01
RG = 3.3W TJ = 125C VCEK < VCES
Fig.10 Typ. turn off energy and switching times versus gate resistor
400
ICM
300 200 100 0 0 200 400 600 800 1000 1200 V VCE
diode
IGBT
0.001 0.0001
single pulse
300-12
0.00001 0.00001 0.0001
0.001
0.01 t
0.1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2000 IXYS All rights reserved
4-4

▲Up To Search▲

Price & Availability of MII300-12A4

	To Download MII300-12A4 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .