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| Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) 3.0V @VGE = 15V, I C = 20A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 40 20 160 160 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 0.77 -- 80 -- Units C/W g (oz) Revision 0 C-663 To Order Previous Datasheet Index Next Data Sheet IRGBC40U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.63 -- V/C VGE = 0V, I C = 1.0mA -- 2.2 3.0 IC = 20A V GE = 15V -- 2.7 -- V IC = 40A See Fig. 2, 5 -- 2.3 -- IC = 20A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 11 18 -- S VCE = 100V, I C = 20A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 51 67 IC = 20A 8.9 11 nC VCC = 400V See Fig. 8 20 33 VGE = 15V 25 -- TJ = 25C 21 -- ns IC = 20A, V CC = 480V 96 190 VGE = 15V, R G = 10 43 120 Energy losses include "tail" 0.34 -- 0.41 -- mJ See Fig. 9, 10, 11, 14 0.75 1.6 25 -- TJ = 150C, 23 -- ns IC = 20A, V CC = 480V 174 -- VGE = 15V, R G = 10 140 -- Energy losses include "tail" 1.4 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 1500 -- VGE = 0V 190 -- pF VCC = 30V See Fig. 7 17 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-664 To Order Previous Datasheet Index Next Data Sheet IRGBC40U 50 F o r b o th : T riangular wav e: 40 L O A D C U R R E N T (A ) D u ty c ycle: 5 0% T J = 12 5C T s in k = 90C G a te d rive a s spe cified P o w e r D is s ip a tio n = 2 8 W S quare w av e: 6 0 % o f ra te d v o lta g e C la m p v o lta g e : 8 0 % o f ra te d 30 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 IC , C ollecto r-to -E m itter C u rrent (A ) I C , Collector-to-E m itter C urrent (A) 100 100 TJ = 25 C TJ = 1 50 C TJ = 2 5C 10 T J = 1 50 C 10 1 1 1 V G E = 1 5V 2 0 s P U LS E W IDTH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 V C E , C ollector-to-E m itter V oltage (V ) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-665 To Order Previous Datasheet Index Next Data Sheet IRGBC40U 40 Maximum DC Collector Current (A) VGE = 15V 3.5 V G E = 1 5V 8 0 s P U LS E W ID TH I C = 4 0A V C E , C olle ctor-to-E m itte r V oltag e (V ) 30 3.0 20 2.5 I C = 2 0A 10 2.0 I C = 10 A 0 25 50 75 100 125 A 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 1 40 160 TC , Case Temperature (C) T C , C as e T em pe ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herm al Response (Z th JC ) D = 0 .5 0 0.2 0 0.1 0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.0 2 0.0 1 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-666 To Order Previous Datasheet Index Next Data Sheet IRGBC40U 30 0 0 25 0 0 C, C apacitance (pF) Cies 20 0 0 Coes 15 0 0 VG E , G ate-to-E m itter V o ltag e (V ) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 2 0A 16 12 8 10 0 0 Cres 500 4 0 1 10 0 0 10 20 30 40 50 60 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1 .9 To ta l S w itch in g Losses (m J) 1 .8 To ta l S w itc hing Lo ss es (m J) VC C VG E TC IC = 4 80 V = 15 V = 25C = 2 0A 10 R G = 10 V GE = 1 5V V CC = 48 0V I C = 4 0A I C = 2 0A 1 .7 1 I C = 10 A 1 .6 1 .5 1 .4 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-667 To Order Previous Datasheet Index Next Data Sheet IRGBC40U 6.0 T o ta l S w itc h in g L o s s e s (m J ) 5.0 I C , C ollec tor-to -E m itter C u rre nt (A ) RG TC VCC VGE = 10 = 1 50C = 48 0V = 1 5V 1000 VG E E 20 V G= T J = 12 5C 4.0 100 S A FE O P E R A TIN G A R E A 3.0 2.0 10 1.0 0.0 0 10 20 30 40 50 1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-668 To Order |
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