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PD- 91100D
IRF7201
HEXFET(R) Power MOSFET
Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S S S G
1 8
A A D D D D
2
7
VDSS = 30V
3
6
4
5
RDS(on) = 0.030
Top View
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
30 7.3 5.8 58 2.5 1.6 0.02 20 30 70 5.0 -55 to + 150
Units
V A W W/C V V mJ V/ns C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W
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1
08/15/03
IRF7201
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 --- --- --- 1.0 5.8 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.024 --- --- --- --- --- --- --- --- 19 2.3 6.3 7.0 35 21 19 550 260 100
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.030 VGS = 10V, ID = 7.3A 0.050 VGS = 4.5V, ID = 3.7A --- V VDS = VGS, ID = 250A --- S VDS = 15V, ID = 2.3A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 28 ID = 4.6A 3.5 nC VDS = 24V 9.5 VGS = 10V, See Fig. 10 --- VDD = 15V --- ID = 4.6A ns --- RG = 6.2 --- RD = 3.2, --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- 48 73 2.5 A 58 1.2 73 110 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 4.6A, VGS = 0V TJ = 25C, IF = 4.6A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 4.6A, di/dt 120A/s, VDD V(BR)DSS,
TJ 150C
VDD = 15V, starting TJ = 25C, L = 6.6mH
RG = 25, IAS = 4.6A. (See Figure 8)
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
2
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IRF7201
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
3.0V
3.0V
1 0.1 1
20s PULSE WIDTH TJ = 25C A
10
1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 150C
10
ISD , Reverse Drain Current (A)
10
TJ = 150C TJ = 25C
1
1 3.0 3.5 4.0
V DS = 10V 20s PULSE WIDTH
4.5 5.0 5.5
A
0.1 0.4 0.6 0.8 1.0
VGS = 0V
A
1.2
VGS , Gate-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
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IRF7201
R DS(on) , Drain-to-Source On Resistance ()
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 4.6A
0.20
1.5
0.15
1.0
0.10
VGS = 4.5V
0.05
0.5
VGS = 10V
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
0.00 0 10 20 30 40
A
TJ , Junction Temperature (C)
I D , Drain Current (A)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. On-Resistance Vs. Drain Current
R DS(on) , Drain-to-Source On Resistance ()
E AS , Single Pulse Avalanche Energy (mJ)
0.05
200
TOP
160
BOTTOM
ID 2.1A 3.7A 4.6A
0.04
120
80
0.03
I D = 7.3A
40
0.02 2 4 6 8 10 12 14 16
A
0 25 50 75 100 125
A
150
V GS , Gate-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 7. On-Resistance Vs. Gate Voltage
Fig 8. Maximum Avalanche Energy Vs. Drain Current
4
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IRF7201
1000
800
Ciss
600
Coss
400
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 4.6A V DS = 24V V DS = 15V
16
C, Capacitance (pF)
12
8
200
Crss
4
0 1 10 100
A
0 0 5 10 15 20 25 30
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100
10
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7201
SO-8 Package Details
D -B-
DIM
5
INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0.10 (.004) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
-CB 8X 0.25 (.010) NOTES: 1. 2. 3. 4. A1 M CASBS
L
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6.46 ( .255 )
1.78 (.070) 8X
1.27 ( .050 ) 3X
SO-8 Part Marking
6
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IRF7201
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/03
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