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| FLM7785-45F C-Band Internally Matched FET FEATURES High Output Power: P1dB=46.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: add=32.5%(Typ.) Broad Band: 7.7~8.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM7785-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 115 -65 to +175 175 Unit V V W O C C O RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=10 RG=10 Condition Limit Unit V mA mA 10 52 -23.2 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G Rth Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=10V f=7.7 - 8.5 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50 Min. -0.5 -5.0 46.0 6.0 - Limit Typ. 24 16 -1.5 46.5 7.0 11 32.5 1.1 - Max. -3.0 13 1.6 1.3 100 Unit A S V V dBm dB A % dB O Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V x Ids(DC) x Rth C/W O C CASE STYLE: IK ESD Class III 2000V~ G.C.P.:Gain Compression Point Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.3 September 2004 1 FLM7785-45F C-Band Internally Matched FET Output Power & P.A.E vs. Input Power 140 Total Power Dissipation (W) 120 50 48 Output Power (dBm) 140 120 100 100 80 60 40 20 0 0 50 100 150 Case Temperature ( OC) 200 46 44 42 40 38 36 28 30 32 34 36 38 40 Input Power (dBm) 42 P.A.E Pout 80 60 40 20 0 IMD vs Output Power Output Power vs. Frequency 48 46 44 42 40 38 36 7.5 7.7 7.9 8.1 8.3 8.5 8.7 Frequency (GHz) Pin=30dBm VDS=10V,IDS(DC)=8A Pin=40dBm P1dB Pin=38dBm Pin=34dBm -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 26 28 VDS=10V, IDS(DC)=8.0A f1=8.50GHz, f2=8.51GHz Output Power (dBm) IMD(dBc) IM3 IM5 30 32 34 36 38 Output Power (dBm) S.C.L : Single Carrier Level 40 2 Power Added Efficiency (%) Power Derating Curve VDS=10V, IDS(DC)=8.0A, f=8.1GHz FLM7785-45F C-Band Internally Matched FET S-PARAMETER +50j +25j +100j +90 +10j 8 .1 G H z 8 .5 G H z +250j 8 .5 G H z 0 8 .1 G H z 5 180 6 6 Scale for |S21| 2 8.5GHz 8.5GHz 7.7GHz 7.7GHz 0 8.1GHz Scale for |S12| -10j 7 .7 G H z 7 .7 G H z -250j 25 8.1GHz -25j 10 -100j S 11 S 22 -50j 0.3 -90 S 12 S 21 VDS=10V, IDS(DC)=8.0A Freq [GHz] 7.5 7.6 7.7 7.8 7.9 8.0 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 S11 MAG 0.59 0.54 0.49 0.44 0.36 0.31 0.26 0.21 0.19 0.18 0.17 0.16 0.15 0.12 ANG -92.42 -115.60 -132.70 -150.94 -175.21 166.47 145.07 122.80 104.80 87.15 66.26 47.84 30.74 8.33 MAG 2.42 2.50 2.53 2.55 2.58 2.59 2.57 2.56 2.55 2.55 2.54 2.55 2.55 2.53 S21 ANG 37.25 18.21 3.25 -12.24 -34.31 -51.85 -73.91 -99.42 -121.60 -143.52 -168.78 169.26 149.06 119.25 MAG 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 S12 ANG 87.74 55.84 31.40 6.43 -27.13 -52.27 -80.04 -110.35 -134.88 -159.01 171.71 145.16 121.06 88.15 MAG 0.55 0.50 0.47 0.44 0.42 0.42 0.41 0.41 0.41 0.40 0.39 0.38 0.36 0.32 S22 ANG -83.48 -102.39 -118.61 -136.88 -161.09 -178.81 161.62 143.05 129.89 118.61 106.72 96.08 87.58 77.86 3 FLM7785-45F C-Band Internally Matched FET Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM7785-45F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5 |
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