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Datasheet File OCR Text: |
Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features * * Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 123 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220 Ratings (--)160 (--)140 (--)6 (--)12 (--)15 80 150 --40 to +150 Tc=25C Unit V V V A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3139, 3140 No.6960-1/4 2SB1683 / 2SD2639 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Saturation Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tf tstg Conditions VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)6A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)1A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)5mA, RBE= IC=(--)50mA, RBE= IE=(--)5mA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. Ratings min 60* 20 typ max 200* Unit 15 (300)210 (1.1)0.6 (--)160 (--)140 (--)140 (--)6 (0.25)0.26 (0.53)0.68 (1.61)6.88 1.5 2.5 MHz pF V V V V V V s s s * : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows : Rank hFE D 60 to 120 E 100 to 200 Switching Time Test Circuit IB1 PW=20s D.C.1% Input 51 VR 200 IB2 RB 1 + 1F + 1F RL 20 VCC=20V Output 10IB1= --10IB2=IC=1A VBE=--2V (For PNP, the polarity is reversed) --10 IC -- VCE 2SB1683 10 IC -- VCE 200mA A 0m 16 mA 120 80mA A Collector Current, IC -- A --2 4 --6 Collector Current, IC -- A --8 A 00m A --2 0m --16 --120mA 0m 8 6 --80mA --4 24 0m A 2SD2639 40mA 4 --40mA --20mA --2 20mA 2 0 0 --10 --20 --30 IB=0 --40 IT03152 0 0 10 20 30 40 IT03153 Collector-to-Emitter Voltage, VCE -- V --7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 7 IC -- VBE --6 2SB1683 VCE= --5V Collector Current, IC -- A 6 2SD2639 VCE=5V Collector Current, IC -- A --5 5 --4 4 --3 3 --2 2 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Base-to-Emitter Voltage, VBE -- V IT03154 Base-to-Emitter Voltage, VBE -- V IT03155 No.6960-2/4 2SB1683 / 2SD2639 5 f T -- IC Gain-Bandwidth Product, f T -- MHz 2SB1683 VCE= --5V 5 3 2 f T -- IC 2SD2639 VCE=5V Gain-Bandwidth Product, f T -- MHz 3 2 10 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 1000 7 5 --10 IT03156 7 1.0 0.1 2 3 5 7 1.0 2 3 5 hFE -- IC Collector Current, IC -- A 1000 7 10 IT03157 hFE -- IC 2SB1683 VCE= --5V DC Current Gain, hFE 7 5 3 2 2SD2639 VCE=5V DC Current Gain, hFE 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.1 10 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 2 7 --10 2 IT03158 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT03159 Cob -- VCB Collector Current, IC -- A 2 Cob -- VCB 2SB1683 f=1MHz Output Capacitance, Cob -- pF 7 5 3 2 2SD2639 f=1MHz Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 1000 1000 7 5 3 2 100 7 5 3 2 --1.0 --10 --100 IT03160 100 7 5 3 2 1.0 2 3 5 7 10 2 3 5 7 100 IT03161 Collector-to-Base Voltage, VCB -- V 3 2 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SB1683 IC / IB=10 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 2SD2639 IC / IB=10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 7 --10 IT03162 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 7 10 IT03163 No.6960-3/4 2SB1683 / 2SD2639 5 3 2 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SD1683 IC / IB=10 5 3 2 VBE(sat) -- IC 2SD2639 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 5 3 2 10 7 5 3 2 --1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT03164 7 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 IT03165 3 2 10 Forward Bias A S O ICP=15A IC=12A DC Collector Current, IC -- A Collector Current, IC -- A 120 PC -- Tc 2SB1683 / 2SD2639 2SB1683 / 2SD2639 Collector Dissipation, PC -- W 100 1m 10 m Collector Current, IC -- A 7 5 3 2 1.0 7 5 3 2 s 10 op era s 0m n 80 s tio 60 40 0.1 1.0 Tc=25C Single pulse For PNP, minus sign is omitted 2 3 5 7 10 2 3 5 7 100 2 3 20 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V IT03166 Case Temperature, Tc -- C IT03168 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6960-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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