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HiPerFETTM Power MOSFETs
VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V
3 4
ID (cont) 44 A 48 A
RDS(on)
trr
0.12 W 35 ns 0.10 W 35 ns
3
Buck & Boost Configurations for PFC & Motor Control Circuits
2
Preliminary data
2 4 1 1
Symbol VDSS VDGR VGS VGSM
HiPerFET MOSFET
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by max. TJM TC = 25C Repetitive IS IDM, -di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 44N50 48N50 44N50 48N50
Maximum Ratings 500 500 20 30 44 48 176 192 24 30 5 V V V V
miniBLOC, SOT-227 B
1 2
4
ID25 IDM IAR EAR dv/dt
A A A A A mJ V/ns
3
PD VRRM
DIODE
520 600
W V A A W C C C V~ V~
IFAVM IFRM PD TJ TJM Tstg
TC = 70C; rectangular, d = 0.5 tp <10 ms; pulse width limited by TJ TC = 25C
60 800 180 -40 ... +150 150 -40 ... +150
Features * Popular Buck & Boost circuit topologies * International standard package miniBLOC SOT-227B * Aluminium nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduced RFI * Ultra-fast FRED diode with soft reverse recovery Applications * Power factor controls and buck regulators * DC servo and robotic drives * DC choppers
CASE
VISOL Md Weight
50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
2500 3000
* Switch reluctance motor controls
Advantages
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
* Easy to mount with 2 screws * Space savings * Tightly coupled FRED
96535B (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-5
IXFN44N50U2 IXFN44N50U3
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 200 TJ = 25C TJ = 125C 400 2 0.12 0.10 V V nA mA mA W W
IXFN48N50U2 IXFN48N50U3
miniBLOC, SOT-227 B
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
44N50 48N50 Pulse test, t 300 ms, duty cycle d 2 % Test Conditions
M4 screws (4x) supplied
Dim. A B Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
Symbol
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 42 8400 S pF pF pF ns ns ns ns nC nC nC K/W K/W
C D E F G H J K L M N O P Q R S T U
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V, ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
900 280 30
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 W (External)
60 100 30 270
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
60 135 0.24 0.05
Ultra-fast Diode Symbol IR Test Conditions TJ= 25C; VR= VRRM
VR= 0.8VRRM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 100 14 1.5 TJ= 25C 35 19 1.8 50 21 mA mA mA V V ns A
TJ= 125C; VR= 0.8VRRM VF IF = 70A, VGS = 0 V, TJ= 150C Pulse test, t 300 ms, duty cycle d 2 % t rr IRM RthJC RthJK
II = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25C IF= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100C
0.05
0.7 K/W K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXFN44N50U2 IXFN44N50U3
Fig.1 Output Characteristics
100 90 80 70 60 50 40 30 20 10 0
5V TJ = 25C VGS = 10V
7V
IXFN48N50U2 IXFN48N50U3
Fig.2 Input Admittance
100
6V
90 80 70 60 50 40 30 20 10 0
TJ = 25C
ID - Amperes
0
5
10
15
20
25
30
35
ID - Amperes
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig.3 RDS(on) vs. Drain Current
1.6
TJ = 25C
Fig.4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.5
RDS(on) - Normalized
RDS(on) - Normalized
1.4 1.3 1.2 1.1 1.0 0.9 0 10 20 30 40 50 60 70 80 90 100
VGS = 15V VGS = 10V
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 24A
ID - Amperes
TJ - Degrees C
Fig.5 Drain Current vs. Case Temperature
60 50
48N50
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
ID - Amperes
40 30 20 10 0 -50
44N50
1.0 0.9 0.8 0.7 0.6
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-5
IXFN44N50U2 IXFN44N50U3
Fig.7 Gate Charge Characteristic Curve
10 9
VDS = 250V ID = 24A
IXFN48N50U2 IXFN48N50U3
Fig.8 Capacitance Curves
10000 9000 8000
Ciss
Capacitance - pF
8 I = 10mA G 7
7000 6000 5000 4000 3000 2000 1000 0
Coss Crss f = 1 MHz VDS = 25V
VGE - Volts
6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400
0
5
10
15
20
25
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Source Current vs. Source to Drain Voltage
100 90 80 70 60 50 40 30 20 10 0 0.00
TJ = 125C
ID - Amperes
TJ = 25C
0.25
0.50
0.75
1.00
1.25
1.50
VSD - Volt
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
0.1
0.01 0.001
0.01
0.1
1
Time - Seconds
(c) 2000 IXYS All rights reserved
4-5
IXFN44N50U2 IXFN44N50U3
IXFN48N50U2 IXFN48N50U3
Fig. 11. Forward voltage drop.
Fig. 12. Recovery charge versus -diF/dt.
Fig. 13. Peak reverse current vs. -diF/dt.
Fig. 14. Dynamic parameters versus junction temperature.
Fig. 15. Recovery time versus -diF/dt.
Fig. 16. Peak forward voltage and forward recovery time vs. diF/dt.
Fig. 17. Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
5-5

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