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| PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT * FEATURES 14 dBm P-1dB at 12 GHz 9 dB Power Gain at 12 GHz 3.0 dB Noise Figure at 12 GHz * DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 m) DIE THICKNESS: 3.9 mils (100 m typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 m typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications. * ELECTRICAL SPECIFICATIONS @ TAmbient = 22 3 C Parameter Output Power @ 1 d B Compression Power Gain @ 1 d B Compression Maximum Available Gain Noise Figure Power-Added Efficiency Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1dB G1dB MAG NF IDSS GM VP |VBDGD| |VBDGS| |IGSL | Test Conditions f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS f = 12 GHz; VDS = 5V; IDS = 50% IDSS; POUT = 15.5 dBm VDS = 2 V; VGS = 0 V VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 1 mA IGS = 1 mA IGS = 1 mA VGS = -5 V 20 15 15 -0.50 8 7 10.5 10 4 10 20 -2.5 Min 13 8 14.5 Typ 14 9 15.5 3.0 25 30 Max Units dBm dB dB dB % mA mS V V V A Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Email: sales@filss.com Revised: 07/18/01 PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT * RECOMMENDED CONTINUOUS OPERATING LIMITS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current RF Input Power Channel Operating Temperature Ambient Temperature Symbol VDS VGS IDS PIN TCH TSTG Nominal 5 -0.8 0.5 IDSS 30 150 -20/50 Units V V mA mW C C Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance. * ABSOLUTE RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature to the device. Symbol VDS VGS IDS IG PIN TCH TSTG Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- Min Max 7 -3 IDSS 2.5 60 175 Units V V mA mA mW C C -65 175 Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage * APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Email: sales@filss.com Revised: 07/18/01 |
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