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| MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE B D X QX QX Z - M5 THD (7 TYP.) S N GuP EuP GvP EvP GwP EwP P R L C N P P GuN EuN GvN EvN GwN EwN J U N V W A E T G F K U AA M M M M AA Y - DIA. (4 TYP.) TAB #110, t = 0.5 H V P GuP EuP U GvP EvP V GwP EwP W GwN EwN N P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150TF-12H is a 600V (VCES), 150 Ampere Six-IGBT Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 12 GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.5430.01 3.150.01 2.01 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.00.25 80.00.25 51.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 6.0 5.5 M5 2.0 Sep.1998 MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IR IEM Pc - - - Viso CM150TF-12H -40 to 150 -40 to 125 600 20 150 300* 150 300* 600 1.47 ~ 1.96 1.47 ~ 1.96 830 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V IC = 150A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.1 2.15 450 - Max. 1.0 0.5 7.5 2.8** - - 2.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 150A, diE/dt = -300A/s IE = 150A, diE/dt = -300A/s VCC = 300V, IC = 150A, VGE1 = VGE2 = 15V, RG = 4.2 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.41 Max. 15 5.3 3 200 550 300 300 110 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.21 0.47 0.025 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 300 250 200 150 100 50 0 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 250 200 150 VGE = 20V 15 12 4 11 3 10 2 100 9 50 0 1 7 8 0 0 50 100 150 200 250 300 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 IC = 300A Cies 101 Coes 6 IC = 150A 102 4 100 Cres 2 IC = 60A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) 103 -di/dt = 300A/s 7 T = 25C j 5 3 2 102 7 5 3 2 101 101 5 7 102 lrr trr 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, VGE 20 IC = 150A 7 5 3 2 101 7 5 3 2 100 5 7 103 16 SWITCHING TIME, (ns) tf td(off) td(on) VCC = 200V 12 102 tr VCC = 300V 8 VCC = 300V VGE = 15V RG = 4.2 Tj = 125C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 23 23 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) EMITTER CURRENT, IE, (AMPERES) Sep.1998 MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.21C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.47C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM150TF-12H
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