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a D . wVERY LOW SATURATION VOLTAGE
DC CURRENT GAIN > 100 (hFE) 3 A CONTINUOUS COLLECTOR CURRENT (IC ) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL
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STT818A
HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR
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APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS DESCRIPTION Using the latest low voltage Epitaxial Planar technology based on interdigitated layout, STMicroelectronics has introduced the new "High Gain" Power bipolar transistor family, with outstanding performances. Its very low saturation voltage combined with the "high gain" characteristics make it ideal for all high efficiency low voltage switching applications. Marking : 818A
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj
Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. O perating Junction Temperature
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SOT23-6L (TSOP6)
INTERNAL SCHEMATIC DIAGRAM
Parameter
Value -30 -30 -5 -3 -6 -0.2 -0.5 1.2 -65 to 150 150
Uni t V V V A A A
February 2001
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STT818A
THERMAL DATA
R thj -amb (1) Thermal Resistance Junction-ambient
(1) Package mounted on FR4 pcb 25mm x 25mm.
Max
105
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = -30 V V CB = -30 V V EB = -5 V I C = -10 mA -30 T C = 125 o C Min. Typ . Max. -0.1 -20 -0.1 Un it A A A V
V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain
I C = -0.7 A I C = -1.2 A I C = -2 A I C = -0.7 A I C = -2 A I C = -0.5 A I C = -2.5 A
I B = -20 mA I B = -20 mA IB = -20 mA I B = -20 mA V CE = -2 V V CE = -1 V V CE = -3 V 100 100
-0.07 -0.12 -0.25
-0.12 -0.25 -0.5 -1.1 -1.1
V V V V V
V BE(s at) V BE(ON) h FE
300
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Safe Operating Area
DC Current Gain
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STT818A
Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Voltage
Switching Times Inductive Load
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STT818A
Switching Times Resistive Load Switching Times Resistive Load
Figure 1: Inductive Load Switching Test Circuits.
1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) F ast electronic switch 2) Non-inductive Resistor
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STT818A
SOT23-6L MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022
DIM.
A A2 A1 b e1 e c L E
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STT818A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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