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| Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9400. July 1998 Features * 1A, -80V and -100V * rDS(ON) = 3.65 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE TO-205AF TO-205AF BRAND RFL1P08 RFL1P10 Symbol D G NOTE: When ordering, include the entire part number. S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1535.2 6-1 RFL1P08, RFL1P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1P08 -80 -80 1 5 20 8.33 0.0667 -55 to 150 300 RFL1P10 -100 -100 1 5 20 8.33 0.0667 -55 to 150 300 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20K) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL AUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 -80 -100 VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 0V, VDS = -25V f = 1MHz (Figure 9) VGS = 20V, VDS = 0 ID = 1A, VGS = -10V ID = 1A, VGS = -10V (Figures 6, 7) ID 1A, VDD = -50V RG = 50 VGS = -10V RL = 47 (Figures 10, 11, 12) 7 15 14 11 -2 -4 -1 25 100 -3.65 3.65 25 45 45 25 150 80 30 15 V A A nA V ns ns ns ns pF pF pF oC/W Electrical Specifications PARAMETER MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL1P08 RFL1P10 Gate to Threshold Voltage Zero Gate Voltage Drain Current - - V Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s maximum, duty cycle 2%. 3. Repetitive rating: pulse width limited by mazimum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -1A ISD = -1A, dISD/dt = 50A/s MIN TYP 135 MAX -1.4 UNITS V ns 6-2 RFL1P08, RFL1P10 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified -1.2 -1.0 ID, DRAIN CURRENT (A) -0.8 -0.6 -0.4 -0.2 0 25 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10.0 OPERATION IN THIS AREA LIMITED BY RDS(ON) TC = 25oC 4 PULSE DURATION = 80s TC = 25oC VGS = -20V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3 1.0 2 VGS = -4V 1 VGS = -10V VGS = -8V VGS = -7V VGS = -6V VGS = -5V 0.10 RFL1P08 RFL1P10 0.01 0 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 -2 -3 -4 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) -5 FIGURE 3. FORWARD BIAS OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 2.5 VDS = -10V PULSE DURATION = 80s 2 -40oC 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 4 125oC 3 25oC 2 -40oC 1 VGS = -10V PULSE DURATION = 80s 1.5 125oC 1 0.5 0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10 0 0 1 2 3 ID, DRAIN CURRENT (A) 4 5 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-3 RFL1P08, RFL1P10 Typical Performance Curves 2 ID = 1A NORMALIZED DRAIN TO SOURCE ON RESISTANCE (m) VGS = -10V THRESHOLD VOLTAGE (V) NORMALIZED GATE 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 150 0.6 -50 Unless Otherwise Specified (Continued) 1.4 ID = 250A VDS = -5V 1 0.5 TJ, JUNCTION TEMPERATURE (oC) 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 140 C, CAPACITANCE (pF) 120 100 80 60 40 20 0 COSS CRSS 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) -50 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VDD = BVDSS 75 GATE SOURCE VOLTAGE RL = 50 IG(REF) = 0.095mA VGS = -10V 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) VDD = BVDSS 8 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS 6 50 4 25 2 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-4 |
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