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| CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMODTM U-Series Module 50 Amperes/1200 Volts A B S 4 - Mounting Holes F E H E G R L M C GuP EuP D GvP EvP GuN EuN U V TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H L K F V N G V T U 0.110 - 0.5 Tab W X P Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50BU-24H is a 1200V (VCES), 50 Ampere FourIGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 GuP EuP U GvP EvP V GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 2.83 2.170.01 3.58 2.910.01 0.43 0.79 0.69 0.75 0.39 0.41 0.05 Millimeters 72.0 550.25 91.0 74.00.25 11.0 20.0 17.5 19.1 10.0 10.5 1.25 Dimensions M N P Q R S T U V W X Inches 0.74 0.02 1.55 0.63 0.57 0.22 Dia. 0.32 1.02 0.59 0.20 1.61 Millimeters 18.7 0.5 39.3 16.0 14.4 5.5 Dia. 8.1 26.0 15.0 5.0 41.0 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODTM U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM50BU-24H -40 to 150 -40 to 125 1200 20 50 100* 50 100* 400 15 31 390 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V, Tj = 25C IC = 50A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 187 - Max. 1 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 , Resistive Load Switching Operation IE = 50A, diE/dt = -100A/s IE = 50A, diE/dt = -100A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.28 Max. 7.5 2.6 1.5 80 200 150 350 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/4 Module Per FWDi 1/4 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.1 Max. 0.31 0.7 - Units C/W C/W C/W 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODTM U-Series Module 50 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT, IC, (AMPERES) 100 VGE = 20V 11 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 12 80 60 80 VCE = 10V Tj = 25C Tj = 125C 4 3 2 1 VGE = 15V Tj = 25C Tj = 125C 60 40 20 10 40 20 0 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 20 40 60 80 100 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 101 Tj = 25C Cies 8 6 4 2 IC = 100A IC = 50A 102 100 Coes 101 10-1 Cres VGE = 0V f = 1MHz IC = 25A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -100A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 600V VGE = 15V RG = 6.3 Tj = 125C tf td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 50A 16 12 8 4 SWITCHING TIME, (ns) VCC = 400V 102 td(on) 102 trr 101 VCC = 600V 101 tr Irr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50BU-24H Four IGBTMODTM U-Series Module 50 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.31C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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