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| BB679... Silicon Variable Capacitance Diode Designed for tuning wideband CATV-Tuners High capacitance ratio C1V/C28V (typ. 18.3) Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure 1 Forward current Storage temperature Operating temperature range BB679-02V 2 Type BB679-02V* Package SC79 Configuration single LS (nH) Marking 0.6 K * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 125 -55 ... 150 mA C Unit V 1 Oct-25-2002 BB679... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 100 pF 43.5 33 2.55 2.4 47.5 36 2.75 2.6 18.3 13.1 0.6 51.5 38.8 2.95 2.8 20 14.5 2 0.8 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 16.5 CT2 /CT25 CT/CT - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz 12 - VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Oct-25-2002 Series resistance Capacitance matching1) rS BB679... Diode capacitance CT = f = 1MHz 10 2 (VR ) Normalized diode capacitance C(TA) /C(25C)= (TA ); f = 1MHz 1.04 CTA/C 25C pF 1.02 CT 1.01 10 1 1 0.99 0.98 10 0 0 10 10 1 V VR 10 2 0.97 -40 -20 10 -3 1/C Tcc 10 -4 IR 10 -5 0 10 capacitance TCc = (VR ) VR = 28 V 10 -9 A 10 -10 10 -11 10 1 V 10 2 10 -12 -40 -20 0 20 VR 3 Temperature coefficient of the diode Reverse current IR = 1V 2V 7V 15 V 25 V 28 V 0 20 40 60 C 100 TA (TA ) 40 60 C 100 TA Oct-25-2002 BB679... Reverse current IR = TA = Parameter 10 -9 A 85C 60C V 45 10 -10 IR 25C 10 -11 VBR 35 10 -12 10 -13 0 10 10 1 V 10 2 30 -40 -20 0 20 VR 4 (VR) Reverse voltage VBR = (TA) IR = 5A 40 60 C 100 TA Oct-25-2002 |
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