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| PD - 91803 IRG4BC30U-S INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard D2Pak package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 23 12 92 92 20 10 100 42 -55 to + 150 Units V A V mJ W Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)* Typ. --- --- Max. 1.2 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 IRG4BC30U-S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage -- 0.63 -- -- 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage -- 2.52 -- IC = 23A See Fig.2, 5 V -- 2.09 -- IC = 12A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -- -13 -- mV/C VCE = VGE, IC = 250A gfe Forward Transconductance 3.1 8.6 -- S VCE = 100V, IC = 12A -- -- 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C IGES Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 7.5 1100 73 14 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig.8 27 VGE = 15V -- -- TJ = 25C ns 120 IC = 12A, VCC = 480V 150 VGE = 15V, RG = 23W -- Energy losses include "tail" -- mJ See Fig. 10, 11, 13, 14 0.50 -- TJ = 150C, -- IC = 12A, VCC = 480V ns -- VGE = 15V, RG = 23W -- Energy losses include "tail" -- mJ See Fig. 13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig.7 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23W , (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30U-S 6.0 For both: Triangular wave: 5.0 Lo ad C u rre n t (A ) Duty cycle: 50% TJ = 125C T sink= 55C Gate drive as specified Power Dissipation = 1.75W 4.0 Clamp voltage: 80% of rated Square wave: 3.0 60% of rated voltage 2.0 1.0 Ideal diodes 0.0 0.1 1 10 A 100 f, F req u e n cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 100 I C , C o lle ctor-to -E m itte r C u rren t (A ) T J = 2 5 C T J = 1 5 0 C 10 I C , C o lle ctor-to -E m itte r C u rren t (A ) T J = 1 5 0 C 10 TJ = 2 5 C 1 1 0.1 0.1 1 VG E = 1 5 V 2 0 s P U LS E W ID T H A 10 0.1 5 6 7 8 V CC = 10 V 5 s P U L S E W ID T H 9 10 11 A 12 V C E , C o lle cto r-to -E m itte r V o ltag e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30U-S M axim u m D C C o lle cto r C u rre n t (A 25 3.0 V C E , C olle c tor-to-E m itter V oltage (V ) V GE = 15V V GE = 15V 8 0 s P U L S E W ID T H IC = 2 4 A 20 2.5 15 IC = 1 2 A 2.0 10 5 I C = 6 .0 A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1.5 TC , C a se Te m p e ra tu re (C ) T J , Ju n c tio n T e m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs.Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 T herm al R esponse (Z thJ C ) 1 D = 0 .5 0 0.2 0 0.1 0 PD M 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fac tor D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z th J C + T C 0.0001 0.00 1 0.01 0.1 1 10 t 1 , R e cta n gu la r P u lse D ura tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30U-S 2000 C , C a pa c ita n ce (p F) 1600 V G E , G a te -to-E m itter V olta ge (V ) V GE = C ies = C res = C oes = 0V , f = 1M H z C ge + C gc , C ce S H O R TE D C gc C ce + C gc 20 VCE = 4 0 0 V IC = 12A 16 C ie s 1200 12 800 C oes 8 400 C re s 4 0 1 10 A 100 0 0 10 20 30 40 50 A V C E , C o lle cto r-to -E m itte r V o lta g e (V ) Q g , To ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 T o ta l S w itch in g L o s s e s (m J ) 0.4 T o ta l S w itch ing L o s s es (m J ) V CC VGE TJ IC = 480V = 15V = 2 5 C = 12A 10 = 23 V GE = 15V V CC = 4 80 V RG IC = 24A 1 I C = 1 2A 0.3 I C = 6 .0 A 0.2 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e sista n ce ( ) TJ , Ju n ctio n Te m pe ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30U-S 1.6 T o ta l S w itc h ing Lo s s e s (m J ) 1.2 I C , C ollector-to-E m itter C urrent (A ) RG TJ V CC V GE = 23 = 1 5 0 C = 480V = 15V 1000 VG E E 20V G= T J = 125 C 100 S A FE O P E R A TIN G A R E A 10 0.8 0.4 1 0.0 0 10 20 30 A 0.1 1 10 100 1000 I C , C o lle cto r-to-E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC30U-S L 50V 1 000V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V * D river sam e type as D.U.T .; Vc = 80% of Vce(m ax) * N ote: Due to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V D .U .T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d (o n ) tr E on E ts = (E o n +E off ) tf t=5s E o ff www.irf.com 7 IRG4BC30U-S D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG NM E N TS 1 - G A TE 2 - D R A IN 3 - S O U RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 8 www.irf.com |
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