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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
*Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) *Gate voltage rating 30 V *Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A) *Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 7.5 30 1.5 70 150 -55 to +150 7.5 37.5 3.5
V V A A W W C C A mJ V/ns
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt
Note2 Note2
IAS EAS dv/dt
Note3
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V 3. IF 3.0 A, Vclamp = 600 V, di/dt 100 A/ s, TA = 25C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998
2SK3116
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHRACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) Trr Qrr TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.75 A VGS = 10 V, ID = 3.75 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.75 A VGS = 10 V RG = 10 RL = 50 VDD = 450 V VGS = 10 V ID = 7.5 A IF = 7.5 A, VGS = 0 V IF = 7.5 A, VGS = 0 V di/dt = 50 A/ s 2.5 2.0 0.9 1100 200 20 18 15 50 15 26 6 10 1.0 1.6 7.6 1.2 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90% 90% ID
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
ID
Wave Form
0
10% td(on) ton tr td(off) toff
10% tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D13339EJ2V0DS
2SK3116
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 20 15 10 5 6V
FORWARD TRANSFER CHARACTERISTICS
100
ID - Drain Current - A
VGS = 10 V 8V
Tch = 125C 75C 10 Tch = 25C -25C
ID - Drain Current - A
1.0
0.1 VDS = 10 V Pulsed 15
0
10
20
30
40
0
5
10
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
5.0
10 Tch = -25C 25C 75C 125C 1.0
VGS(off) - Gate Cut-off Voltage - V
4.0
3.0
2.0
1.0 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150
VDS = 10 V Pulsed 0.1 0.1
1.0 ID - Drain Current - A
10
Tch - Channel Temperature - C
RDS (on) - Drain to Source On-State Resistance -
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0 Pulsed
2.0 ID = 4.0 A 7.5 A 1.0
2.0 VGS = 10 V 20 V 1.0
0 0
5
10
15
0
1.0
VGS - Gate to Source Voltage - V
10 ID - Drain Current - A
100
Data Sheet D13339EJ2V0DS
3
2SK3116
RDS (on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
100
3.0 ID = 7.5 A 4.0 A
10
2.0
1.0 VGS = 10 V 0V
1.0 VGS = 10 V Pulsed 0 50 100 150 Tch - Channel Temperature - C
0.1
0 -50
Pulsed 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
SWITCHING CHARACTERISTICS
10000 Ciss
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
td(off) tf 10 td(on)
1000
100
Coss
tr 1 VDD = 150 V VGS = 10 V RG = 10 1 ID - Drain Current - A 10
10 VGS = 0 V f = 1 MHz 10 100 Crss 1000
1 1.0
0.1 0.1
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
600
1000
VDD = 450 V 300 V 150 V
12 VGS 10 8 6
400
100
200 VDS
4 2 12 20 0 32
10 0.1
1.0
10
100
0
8
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D13339EJ2V0DS
VGS - Gate to Source Voltage - V
di/dt = 50 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 7.5 A 14
2SK3116
5
100
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
5
80
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
80
60
40
20
0 0
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse)
PW
ID - Drain Current - A
10
RD
) on S(
Lim
d ite
ID(DC)
1
=
10 0
10 s
s
m s
Po we r
1
Di ss ipa tio n
3 10 ms 3 m 10 0 m s 0s DC ms
Lim ite d
0.1 1
TC = 25C Single Pulse 10 100 1000
VDS - Drain to Source Voltage - V
5
rth(t) - Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3C/W
10 Rth(ch-C) = 1.79C/W 1
0.1
0.01 10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13339EJ2V0DS
5
2SK3116
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
Energy Derating Factor - %
120 100 80 60 40 20 0 25
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 VGS = 20 0 V IAS 7.5 A
10
IAS = 7.5 A
EAS
=3
7.5
mJ
1.0 RG = 25 VDD = 150 V VGS = 20 0 V Starting Tch = 25C 100 1m 10 m L - Inductive Load - H
0.1 10
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13339EJ2V0DS
2SK3116
5 PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 TYP. 4.8 MAX.
2) TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
1.30.2
6.0 MAX.
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3) TO-263 (MP-25ZJ)
10 TYP. 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
EQUIVALENT CIRCUIT
Drain (D)
1 1.40.2 0.70.2 2.54 TYP.
2
3
5.70.4
R 0.5
TY
P.
TY P.
2.54 TYP.
0.8
R
0.50.2
Gate (G)
Body Diode
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source (S)
Data Sheet D13339EJ2V0DS
7
2SK3116
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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