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| UNISONIC TECHNOLOGIES CO., LTD. SB2202 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. PNP EPITAXIAL SILICON TRANSISTOR 1 FEATURES *High current output up to 3A *Low saturation voltage TO-252 * Pb-free plating product number: SB2202L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter ORDERING INFORMATION Order Number Normal Lead free SB2202-TN3-R SB2202L-TN3-R SB2202-TN3-T SB2202L-TN3-T Package TO-252 TO-252 Packing Tape & Reel Tube www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., LTD. 1of 4 QW-R209-020,A SB2202 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Junction Temperature Storage Temperature DC PULSE Tc=25C Ta=25C SYMBOL VCBO VCEO VEBO IB IC ICM Pc TJ TSTG PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise specified ) RATINGS -40 -30 -5 -0.6 -3 -7 10 1 +150 -40 ~ +150 UNIT V V V A A W C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.) SYMBOL VCE(sat) VBE(sat) ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300s, Duty Cycle<2% PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current TEST CONDITIONS IC =-2A, IB= -0.2A IC = -2A, IB= -0.2A VCB= -30V, IE=0 VEB= -3V, IC =0 VCE= -2V, IC = -20mA VCE= -2V, IC = -1A VCE= -5V, IC = -0.1A VCB= -10V, IE=0, f=1MHz MIN TYP -0.3 -1.0 MAX -0.5 -2.0 1 1 400 80 45 MHz pF UNIT V V mA mA 30 100 200 CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 P 160 ~ 320 E 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R209-020,A SB2202 TYPICAL CHARACTERISTICS Static characteristics PNP EPITAXIAL SILICON TRANSISTOR Derating curve of safe operating areas 150 -Collector Curren t, IC (A) 1.6 -Ic Derating ( ) 1.2 0.8 -IB = 9mA -IB=8mA -IB=7mA -IB=6mA -IB=5mA -IB= 4mA -IB=3mA -IB=2mA -IB=1mA 0 4 8 12 16 20 100 S/ bl im ite d n io at ip ss Di 50 0.4 0 ite lim d 0 - 40 0 40 80 120 150 Case Temperature,TC ( ) Collector output capacitance 10 3 I E=0 f=1MHz -Collector - Emitter Voltage, (V) Power derating 12 Output Capacitance (pF) Power Dissipation (W) 8 10 2 4 101 0 -40 0 40 80 120 150 ) Case Temperature, TC ( 10 0 10 0 1 10- 2 10- -3 10 -Collector - Base Voltage(V) Current gain- bandwidth product Safe operating area 101 I c(max ) , Pulse 10m s Ic (max ), DC 10 0 Current gain bandwidth Product, fT (MHz) 10 3 s m 0.1 VCE=5V 10 2 I B=8mA B =8mA 10 1 -Collector Current, IC (A) 1m s -1 10 10 0 10 -2 10-1 10 0 10 1 10 -2 100 1 10 102 Collector Current, I C (A) Collector- Emitter Voltage UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-020,A SB2202 TYPICAL CHARACTERISTICS (cont.) DC current gain 10 DC current Gain, HFE 3 PNP EPITAXIAL SILICON TRANSISTOR Saturation Voltage VCE= -2V Saturation Voltage (mV) 10 4 10 3 VBE ( sat) 102 10 2 101 VCE (sat) 10 1 100 10 0 10 1 10 2 10 3 10 4 10 0 100 101 102 103 104 -Collector current, IC (mA) -Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-020,A |
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