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| IRF740A / RF1S740AST September 2002 IRF740A / RF1S740AST 10A, 400V, 0.550 Ohm, N-Channel SMPS Power MOSFET Applications * Switch Mode Power Supplies (SMPS) * Uninterruptable Power Supply * High Speed Power Switching * Improved Gate, Avalanche and Dynamic dv/dt Ruggedness * Improved Body Diode Features * Low Gate Charge Qg results in Simple Drive Requirement Package JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE Symbol JEDEC TO-263AB DRAIN (FLANGE) G S SOURCE D Absolute Maximum Ratings TJ = 25C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100 C, VGS = 10V) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw o Ratings 400 30 10 6.3 40 147 1.18 -55 to 150 300 (1.6mm from case) 10ibf*in (1.1N*m) Units V V A A A W W/oC o o C C Thermal Characteristics RJC RCS RJA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient 0.85 0.50 TYP 62 o C/W C/W oC/W o www..com (c)2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C www..com www..com IRF740A / RF1S740AST Package Marking and Ordering Information Device Marking IRF740A RF1S740A Device IRF740A RF1S740AST Package TO-220AB TO-263AB Reel Size Tube 330mm Tape Width NA 24mm Quantity 50 800 Electrical Characteristics TJ = 25C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 6A VDS = VGS, ID = 250A VDS = 350V VGS = 0V VGS = 20V TC = 150o 400 2.0 0.48 0.40 3.6 0.55 4.0 1 250 100 V A nA V BVDSS/TJ Breakdown Voltage Temp. Coefficient rDS(ON) VGS(th) IDSS IGSS Drin to Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Dynamics gfs Qg(TOT) Qgs Qgd td(ON) tr td(OFF) tf CISS COSS CRSS COSS COSS Forward Transconductance Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance VDS = 50V, ID = 6A VGS = 10V, VDS = 320V, ID = 10A VDD = 200V, ID = 10A RG = 10, RD = 19.5 VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V, VDS = 1V, f = 1MHz VGS = 0V, VDS = 320V, f = 1MHz 4.9 17.2 4.5 5.8 6 8 21 7 1060 150 7.8 1490 52 22 6.0 7.5 S nC nC nC ns ns ns ns pF pF pF pF pF Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy 630 12.5 10 mJ A mJ Drain-Source Diode Characteristics IS ISM VSD trr QRR Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge MOSFET symbol showing the integral reverse p-n junction diode. ISD = 18A ISD = 9A ISD = 10A, dISD/dt = 100A/ms ISD = 10A, dISD/dt = 100A/ms D 240 1.9 10 40 1.25 1.0 360 2.9 A A V V ns C G S - (c)2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Typical Characteristic 100 ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) TC = 25oC VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V 100 TC = 150oC VGS DESCENDING 10V 6V 5.5V 5V 4.5V 10 10 1.0 1.0 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.1 0.1 1.0 10 100 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.1 0.1 1.0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics rDS(ON), DRAIN TO SOURCE ON RESISTANCE (W) 100 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX VDD = 50V ID , DRAIN CURRENT (A) 10 1.0 Figure 2. Output Characteristics TJ = 25oC PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 0.8 TJ = 150oC 0.6 0.4 1.0 0.2 VGS = 10V, ID = 10A 0 -50 -25 0 25 50 75 100 125 150 0.1 3 4 5 6 7 8 VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Transfer Characteristics Figure 4. Drain To Source On Resistance vs Junction Temperatrue 16 VGS , GATE TO SOURCE VOLTAGE (V) ID = 10A 104 VGS = 0V, f = 1MHz CISS C, CAPACITANCE (pF) 103 COSS 102 CRSS 101 CISS = CGS + CGD COSS @ CDS + CGD CRSS = CGD 100 1.0 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 12 200V 8 320V 80V 4 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant Gate Current (c)2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Typical Characteristic 100 ISD , SOURCE TO DRAIN CURRENT (A) 100 TC = 25oC TJ = 150oC 10 TJ = 25oC ID, DRAIN CURRENT (A) 10 100ms 1ms 1.0 1.0 OPERATION IN THIS AREA LIMITED BY RDS(ON) 10ms 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , SOURCE TO DRAIN VOLTAGE (V) 0.1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 Figure 7. Source to Drain Diode Forward Voltage 10 Figure 8. Maximum Safe Operating Area 8 ID, DRAIN CURRENT (A) 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9. Maximum Drain Current vs Case Temperature ZqJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 PD t1 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC 10-2 SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Transient Thermal Impedance, Junction to Case (c)2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C IRF740A / RF1S740AST Test Circuits and Waveforms VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG - BVDSS VDS VDD + VDD IAS 0.01W 0 tAV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms VDS RL VDD VDS Qg(TOT) VGS = 10V VGS Qg(5) VDD DUT Ig(REF) 0 VGS VGS = 1V Qg(TH) Qgs Ig(REF) 0 Qgd VGS = 5V + Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON td(ON) RL VDS 90% tr tOFF td(OFF) tf 90% VGS + VDD DUT 0 10% 10% 90% VGS 50% PULSE WIDTH 50% RGS VGS 0 10% Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform (c)2002 Fairchild Semiconductor Corporation IRF740A / RF1S740AST Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST(R) CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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