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| UNISONIC TECHNOLOGIES CO., LTD 2SA733 LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. 3 PNP SILICON TRANSISTOR 3 2 1 SOT-23 FEATURES * Collector-Emitter voltage: BVCBO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 2 1 SOT-323 *Pb-free plating product number:2SA733L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA733-X-AE3-R 2SA733L-x-AE3-R 2SA733-x-AL3-R 2SA733L-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E C B E C B Packing Tape Reel Tape Reel 2SA733L-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn MARKING A7 www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-068,B 2SA733 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25 ) PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified) SYMBOL RATINGS UNIT VCBO -60 V VCEO -50 V VEBO -5 V 250 mW PC Collector Current IC -150 mA Junction Temperature TJ 125 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO VCE(SAT) ICBO IEBO hFE fT Cob NF TEST CONDITIONS IC=-100A, IE=0 IC=-10mA, IB=0 IC=-100mA, IB=-10mA VCB=-40V, IE=0 VEB=-3V, IC=0 VCE=-6V, IC=-1mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-0.1mA, VCE=-6V RG=10k, f=100Hz MIN -60 -50 TYP MAX UNIT V V -0.1 -0.3 V -100 nA -100 nA 600 190 MHz 2.0 3.0 pF 4.0 6.0 dB 90 100 CLASSIFICATION OF hFE RANK RANGE R 90-180 Q 135-270 P 200-400 K 300-600 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-068,B 2SA733 TYPICAL CHARACTERISTICS Fig.1 Static Characteristics -100 -80 I B=-300A -60 -40 IB =-250A I B=-200A IB =-150A -20 0 IB =-100A IB =-50A 0 -4 -8 -12 -16 -20 Collector-Emitter Voltage ( V) 100 -10-1 103 PNP SILICON TRANSISTOR Fig.2 DC Current Gain Collector Current, IC (mA) VCE=-6V DC Current Gain, hFE 102 101 -100 -101 -102 Collector Current, IC (mA) -103 Fig.3 Base-Emitter on Voltage -102 -10 4 Fig.4 Saturation Voltage IC=10*IB Collector Current, I C (mA) -10 1 VCE=-6V Saturation Voltage (MV) -10 3 VBE(SAT) VCE(SAT) -102 -100 -10 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -10 -10-1 1 -100 -101 -102 -103 Base-Emitter Voltage (V) Fig.5 Current Gain-Bandwidth Product Collector Current, IC (mA) Fig.6 Collector Output Capacitance 102 Current Gain-Bandwidth Product, fT(MHz) 10 3 102 VCE=-6V Capacitance, Cob (pF) -102 101 10 1 100 100 -1 -10 -100 -101 Collector Current, I C (mA) 10-1 -100 -101 -102 -103 Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-068,B 2SA733 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-068,B |
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