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Bulletin I25233 10/06
ST173CPBF SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version
Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2 t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST173C..C
330 55 610 25 4680 4900 110 100 1000 to1200 15 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s C
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1
ST173CPBF Series
Bulletin I25233 10/06
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM/V RRM, maximum repetitive peak voltage V
ST173C..C 10 12 1000 1200
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 760 730 600 350 50 V DRM 50 40
ITM 180oel 660 590 490 270 50 50 55 1200 1260 1200 850 50 V DRM 40
ITM 100s 1030 1080 1030 720 50 55 5570 2800 1620 800 50 V DRM 40
ITM
Units
4920 2460 1390 680 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current cooled I TSM Max. peak, one half cycle, non-repetitive surge current 4680 4900 3940 4120 I 2t Maximum I2t for fusing 110 100 77 71 I t
2
ST173C..C
330 (120) 55 (85) 610
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side
t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA s
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
Maximum I t for fusing
2
1100
t = 0.1 to 10ms, no voltage reapplied
2
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ST173CPBF Series
Bulletin I25233 10/06
On-state Conduction
Parameter
VTM V T(TO)1 Max. peak on-state voltage Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
ST173C..C
2.07 1.55 1.61 0.87
Units
Conditions
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
Low level value of forward slope resistance m 0.77 600 1000 mA
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
T J = 25C, I T > 30A T J = 25C, V A = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST173C..C
1000 1.1 Min 15 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
p
Typical delay time
s
Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
tq
Max. turn-off time
Blocking
Parameter
dv/dt I RRM I DRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST173C..C
500 40
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST173C..C
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT I GD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST173CPBF Series
Bulletin I25233 10/06
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST173C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
Max. operating temperature range Max. storage temperature range
R thJ-hs Max. thermal resistance, junction to heatsink R thC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
0.015 0.018 0.024 0.035 0.060 0.016 0.019 0.024 0.035 0.060
Rectangular conduction
0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
Single Side Double Side Single Side Double Side
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
17
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9 10
P
11
1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) 11 - P = Lead Free dv/dt - tq combinations available
dv/dt (V/s) 15 18 t (s) 20 q 25 30 20 CL CP CK CJ -50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH
*Standard part number.
All other types available only on request.
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ST173CPBF Series
Bulletin I25233 10/06
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 0 40 80 120 160 200 240 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduction Angle
Maximum Allowable Heatsink T emperature (C)
S 173C..C S T eries (S ingle S ide Cooled) RthJ-hs(DC) = 0.17 K/ W
130 120 110 100 90 80 70 60 50 40 30 20 0 50 100 30
S 173C..C S T eries (S ingle S ide Cooled) R thJ-hs(DC) = 0.17 K/ W
Conduction Period
60 90 120 180 150 200 250 DC 300 350
30
60 90 120
180
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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ST173CPBF Series
Bulletin I25233 10/06
Maximum Allowable Heats T ink emperature (C)
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90
130 120 110 100 90 80 70 60 50 40 30 20 0 100 200 30
S 173C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.08 K/ W
S 173C..C S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.08 K/ W
Conduc tion Angle
Conduction Period
80 70 60 50 40 30 0 50 100 150 200 250 300 350 400 Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
30 60 90 120 180
60
120 90 180 300 400
DC 500 600 700
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
1000 900 800 700 600 500 400
Conduction Angle
Maximum Average On-state Power Los (W) s
1400 1200 1000 800 600 RMS Limit
Conduction Period
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30
300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
400 200 0 0 100 200 300 400 500 600 700 Average On-state Current (A)
Fig. 6 - On-state Power Loss Characteristics
S 173C..C S T eries TJ = 125C
S 173C..C S T eries TJ = 125C
Peak Half S Wave On-state Current (A) ine
4000
At Any R ated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
Peak Half S Wave On-state Current (A) ine
4500
5000
3500
Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control 4500 Of Conduction May Not Be Maintained. Initial T = 125C J 4000 No Voltage Reapplied Rated VRRM Reapplied 3500 3000 2500 2000 S 173C..C S T eries
3000
2500 S 173C..C S T eries 2000 1 10 100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
1500 0.01
0.1 Pulse T rain Duration (s)
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST173CPBF Series
Bulletin I25233 10/06
T ransient T hermal Impedanc e Z thJ-hs (K/ W)
10000 Instantaneous On-state Current (A) S 173C..C S T eries
1 S 173C..C S T eries
0.1
1000
S teady S tate Value 0.01 R thJ-hs = 0.17 K/ W (S ingle S ide Cooled) R thJ-hs = 0.08 K/ W (Double S Cooled) ide 0.001 0.001 (DC Operation) 0.01 0.1 1 10
TJ= 25C TJ= 125C 100 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
S quare Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum Revers Recovery Current - Irr (A) e 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) S 173C..C S T eries TJ= 125 C
IT = 500 A M 300 A 200 A 100 A 50 A
Maximum Reverse R overy Charge - Qrr (C) ec
250 S 173C..C S T eries T = 125 C J
I T = 500 A M 300 A 200 A
200
150
100 A
100
50 A
50
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1E4
S nub b er c irc uit Rs = 47 ohms Cs = 0.22 F V D = 80% VDRM 1000 500 1500 400 200 100 50 Hz
Peak On-state Current (A)
S nub ber circuit Rs = 47 ohms Cs = 0.22 F V D = 80% V DRM
400 200 1000 500 1500 2500 3000
100 50 Hz
1E3
3000 5000
2500
tp
S 173C..C S T eries S inusoida l pulse T = 40C C
5000 tp
S 173C..C S T eries S inusoid al pulse TC = 55C
1E2 1E1
1E2
1E 3
1E 1E 41 1E4 1E1
1E 2
1E 3
1E 4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
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ST173CPBF Series
Bulletin I25233 10/06
1E4
S nub b er circ uit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Pea k On-state Current (A)
S nub b er c irc uit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
1E3
2000 2500 3000 5000 1500
100 50 Hz 400 200 1000 500
1500
S 173C..C S T eries T ezoid al p ulse rap TC = 40C d i/ d t = 50A/ s
400 200 1000 500
100 50 Hz
2000 2500 3000 tp 5000
tp
S 173C..C S T eries T pezoida l pulse ra TC = 55C d i/ dt = 50A/ s
1E2 1E 1
1E2
1E3
1E4 1E1 1 1E4 1E
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 14 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
S nub ber c irc uit R s = 47 ohms C s = 0.22 F V D = 80% V DRM 500 400 200 100 50 Hz
1500 2500 3000 5000 1000 500
S nub ber c ircuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM 100 400 200 50 Hz
1E3
1500 2500 3000 1000
1E2
5000 10000
tp
S 173C..C S T eries T ezoid al p ulse rap TC = 40C di/d t = 100A/s
10000 tp
S 173C..C S T eries T ezoid al p ulse rap TC = 55C d i/ d t = 100A/ s
1E1 1E1
1E2
1E3
1E4 1E1 1 1E4 1E
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 15 - Frequency Characteristics
Pulse Basewid th (s)
1E 5
S 173C..C S T eries R ta ngular p ulse ec di/ dt = 50A/ s 20 joules p er pulse 3 5 10
Pea k On-state Current (A)
tp
1E 4
20 joules p er p ulse 1 2 35 10
2 1 0.5 0.3 0.2
1E 3
0.3 0.2 0.1
0.5
1E 2
S 173C..C S T eries S inusoida l pulse
0.1
tp
1E 1 1E1
1E 2
1E3
1E4 1E1 1 1E4 1E
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST173CPBF Series
Bulletin I25233 10/06
100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 173C..C S T eries F requency Limited by PG(AV) 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/06
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