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| MBT6429DW1T1 Amplifier Transistors NPN Silicon Features * Pb-Free Package is Available (3) http://onsemi.com (2) (1) MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 45 55 6.0 200 Unit Vdc Vdc Vdc mAdc (4) (5) (6) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 150 RqJA TJ, Tstg 833 -55 to +150 C/W C Max Unit mW 1 SC-88 (SOT-363) 419B MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended foot print. 1 1T M G G 1T = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBT6429DW1T1 MBT6429DW1T1G Package SC-88 Shipping 3000/Tape & Reel SC-88 3000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 December, 2005 - Rev. 2 Publication Order Number: MBT6429DW1T1/D MBT6429DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) (IC = 0.1 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base -Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Cobo - Cibo - 8.0 3.0 pF 700 pF MHz hFE 500 500 500 500 VCE(sat) - - VBE(on) 0.56 0.66 0.2 0.6 Vdc - 1250 - - Vdc - V(BR)CEO 45 V(BR)CBO 55 ICES - ICBO - IEBO - 0.01 0.01 mAdc 0.1 mAdc - mAdc - Vdc Vdc Symbol Min Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MBT6429DW1T1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA en , NOISE VOLTAGE (nV) RS 0 20 RS 0 f = 10 Hz 100 Hz 10 kHz 5.0 30 BANDWIDTH = 1.0 Hz 10 7.0 5.0 10 7.0 1.0 kHz 300 mA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS 0 10 20 10 mA 50 100 200 3.0 mA 1.0 mA 300 mA 100 mA 30 mA 0 10 20 20 16 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA NF, NOISE FIGURE (dB) BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 100 mA 4.0 10 mA IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 mA 3.0 mA 1.0 mA 300 mA 30 mA 10 mA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0 Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 mA 100 mA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 30 mA 10 mA 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 MBT6429DW1T1 h FE , DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 -55 C Figure 8. DC Current Gain 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/C) -0.4 -0.8 0.6 VBE @ VCE = 5.0 V -1.2 TJ = 25C to 125C 0.4 -1.6 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 -2.0 -55 C to 25C 20 50 100 50 100 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. "On" Voltages BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C 500 300 200 f T, CURRENT-GAIN 100 70 50 1.0 VCE = 5.0 V TJ = 25C 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 MBT6429DW1T1 PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE V D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 C -E- HE 1 2 3 L b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MBT6429DW1T1/D |
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